Nexperia USA Inc. PMBTA56,215
- Part Number:
- PMBTA56,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845163-PMBTA56,215
- Description:
- TRANS PNP 80V 0.5A SOT23
- Datasheet:
- PMBTA56,215
Nexperia USA Inc. PMBTA56,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMBTA56,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- Terminal PositionDUAL
- Terminal FormGULL WING
- Base Part NumberPMBTA56
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency50MHz
- Frequency - Transition50MHz
- RoHS StatusROHS3 Compliant
PMBTA56,215 Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.As a result, the part has a transition frequency of 50MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PMBTA56,215 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
PMBTA56,215 Applications
There are a lot of Nexperia USA Inc.
PMBTA56,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.As a result, the part has a transition frequency of 50MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PMBTA56,215 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
PMBTA56,215 Applications
There are a lot of Nexperia USA Inc.
PMBTA56,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PMBTA56,215 More Descriptions
In a Pack of 100, Nexperia PMBTA56, 215 PNP Transistor, 500 mA, 80 V, 3-Pin SOT-23
PMBTA56 - PNP general purpose transistor
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
BIPOLAR TRANSISTOR, PNP, -80V, -500MA, 3-SOT-23
50nA 80V 250mW 500mA 100@100mA,1V 50MHz 250mV@100mA,10mA PNP 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Bipolar Transistor, Pnp, -80V, -500Ma, 3-Sot-23; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Nexperia PMBTA56,215.
PMBTA56 - PNP general purpose transistor
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
BIPOLAR TRANSISTOR, PNP, -80V, -500MA, 3-SOT-23
50nA 80V 250mW 500mA 100@100mA,1V 50MHz 250mV@100mA,10mA PNP 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Bipolar Transistor, Pnp, -80V, -500Ma, 3-Sot-23; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Nexperia PMBTA56,215.
The three parts on the right have similar specifications to PMBTA56,215.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionTerminal FormBase Part NumberPin CountNumber of ElementsConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusPower - MaxVCEsat-MaxCollector-Base Capacitance-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Contact PlatingMountToleranceTerminationMax Power DissipationFrequencyElement ConfigurationTest CurrentGain Bandwidth ProductZener VoltageCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinOutside DiameterZener CurrentREACH SVHCRadiation HardeningLead FreeView Compare
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PMBTA56,2154 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3Active1 (Unlimited)3EAR99Tin (Sn)8541.21.00.95DUALGULL WINGPMBTA5631SINGLE250mWSWITCHINGPNPPNP100 @ 100mA 1V50nA ICBO250mV @ 10mA, 100mA80V500mA50MHz50MHzROHS3 Compliant-------------------------------
-
4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1012009e3Active1 (Unlimited)3EAR99Tin (Sn)8541.21.00.95DUALGULL WINGPMBT555131SINGLE--NPNNPN80 @ 10mA 5V50nA ICBO200mV @ 5mA, 50mA160V300mA100MHz300MHzROHS3 Compliant26040Not Qualified250mW0.2 V6pF------------------------
-
4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1012009e3Active1 (Unlimited)3EAR99Tin (Sn)8541.21.00.75DUALGULL WINGPMBT390431SINGLE-SWITCHINGNPNNPN100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V200mA300MHz300MHzROHS3 Compliant26030-250mW--250ns70ns----------------------
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4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-3SILICON150°C TJTape & Reel (TR)-2008e3Active1 (Unlimited)3---DUALGULL WINGPMBTA4531-300mWSWITCHINGNPNNPN50 @ 50mA 10V100nA90mV @ 6mA, 50mA--35MHz-ROHS3 Compliant--------TinSurface Mount5%Axial300mW35MHzSingle20mA35MHz12V500V150mA500V500V500V6V502.6 mm500mANo SVHCNoLead Free
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