WeEn Semiconductors PHE13003A,126
- Part Number:
- PHE13003A,126
- Manufacturer:
- WeEn Semiconductors
- Ventron No:
- 2846032-PHE13003A,126
- Description:
- TRANS NPN 400V 1A SOT54
- ECAD Model:
-
- Datasheet:
- PHE13003A,126
WeEn Semiconductors PHE13003A,126 technical specifications, attributes, parameters and parts with similar specifications to WeEn Semiconductors PHE13003A,126.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Power - Max2.1W
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 400mA 5V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 250mA, 750mA
- Voltage - Collector Emitter Breakdown (Max)400V
- Current - Collector (Ic) (Max)1A
- RoHS StatusRoHS Compliant
PHE13003A,126 Overview
In this device, the DC current gain is 10 @ 400mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 250mA, 750mA.The device exhibits a collector-emitter breakdown at 400V.
PHE13003A,126 Features
the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA
PHE13003A,126 Applications
There are a lot of WeEn Semiconductors
PHE13003A,126 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 400mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 250mA, 750mA.The device exhibits a collector-emitter breakdown at 400V.
PHE13003A,126 Features
the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA
PHE13003A,126 Applications
There are a lot of WeEn Semiconductors
PHE13003A,126 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PHE13003A,126 More Descriptions
Bipolar Transistors - BJT Single NPN 1A 2.1W
Trans GP BJT NPN 400V 1A 2100mW 3-Pin TO-92 Ammo
Npn Power Transistor, 400 V, 1 A, 3-To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:400V; Continuous Collector Current:1A; Power Dissipation:2.1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Ween Semiconductors PHE13003A,126
Trans GP BJT NPN 400V 1A 2100mW 3-Pin TO-92 Ammo
Npn Power Transistor, 400 V, 1 A, 3-To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:400V; Continuous Collector Current:1A; Power Dissipation:2.1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Ween Semiconductors PHE13003A,126
The three parts on the right have similar specifications to PHE13003A,126.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodePower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)RoHS StatusView Compare
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PHE13003A,126Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)150°C TJTape & Box (TB)Active1 (Unlimited)EAR992.1WNPN10 @ 400mA 5V1mA1.5V @ 250mA, 750mA400V1ARoHS Compliant- -
Through HoleTO-220-3 Full Pack, Isolated Tab150°C TJTubeObsolete1 (Unlimited)-26WNPN10 @ 2A 5V100μA1V @ 1A, 4A400V4A-
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Through HoleTO-226-3, TO-92-3 (TO-226AA)150°C TJBulkActive1 (Unlimited)EAR992.1WNPN10 @ 400mA 5V1mA1.5V @ 250mA, 750mA400V1ARoHS Compliant
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)150°C TJTape & Box (TB)Active1 (Unlimited)EAR992.1WNPN5 @ 1A 2V100μA1.5V @ 500mA, 1.5A400V1.5ARoHS Compliant
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