STMicroelectronics PD57060S-E
- Part Number:
- PD57060S-E
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2474759-PD57060S-E
- Description:
- FET RF 65V 945MHZ PWRSO10
- ECAD Model:
-
- Datasheet:
- PD57060S-E
STMicroelectronics PD57060S-E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics PD57060S-E.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time25 Weeks
- MountSurface Mount
- Package / CasePowerSO-10 Exposed Bottom Pad
- Number of Pins3
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Max Operating Temperature165°C
- Min Operating Temperature-65°C
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC65V
- Max Power Dissipation79W
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)250
- Current Rating7A
- Frequency945MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberPD57060
- Pin Count10
- JESD-30 CodeR-PDSO-F2
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation79W
- Case ConnectionSOURCE
- Current - Test100mA
- Transistor ApplicationAMPLIFIER
- Drain to Source Voltage (Vdss)65V
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Continuous Drain Current (ID)7A
- Gate to Source Voltage (Vgs)20V
- Gain14.3dB
- Max Output Power60W
- Drain Current-Max (Abs) (ID)7A
- Drain to Source Breakdown Voltage65V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test28V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PD57060S-E Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PD57060S-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PD57060S-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PD57060S-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PD57060S-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PD57060S-E More Descriptions
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
Trans RF MOSFET N-CH 65V 7A 3-Pin(2 Tab) PowerSO-10RF (Straight lead) Tube
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETsSTMicroelectronics SCT
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 7A; Power Dissipation Pd: 79W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-10RF; No. of Pins: 3Pins; Operating Temperature Max: 165°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (07-Jul-2017)
Trans RF MOSFET N-CH 65V 7A 3-Pin(2 Tab) PowerSO-10RF (Straight lead) Tube
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETsSTMicroelectronics SCT
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 7A; Power Dissipation Pd: 79W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-10RF; No. of Pins: 3Pins; Operating Temperature Max: 165°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (07-Jul-2017)
The three parts on the right have similar specifications to PD57060S-E.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountPackage / CaseNumber of PinsPackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionCurrent - TestTransistor ApplicationDrain to Source Voltage (Vdss)Polarity/Channel TypeTransistor TypeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)GainMax Output PowerDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyVoltage - TestRadiation HardeningRoHS StatusLead FreeVoltage - RatedConfigurationDS Breakdown Voltage-MinPower - OutputPbfree CodeReach Compliance CodeQualification StatusView Compare
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PD57060S-EACTIVE (Last Updated: 8 months ago)25 WeeksSurface MountPowerSO-10 Exposed Bottom Pad3Tubee3Active3 (168 Hours)2EAR99Matte Tin (Sn) - annealed165°C-65°CHIGH RELIABILITYFET General Purpose Power65V79WDUALFLAT2507A945MHz30PD5706010R-PDSO-F21SingleENHANCEMENT MODE79WSOURCE100mAAMPLIFIER65VN-CHANNELLDMOS7A20V14.3dB60W7A65VMETAL-OXIDE SEMICONDUCTOR28VNoROHS3 CompliantLead Free-------- -
-25 WeeksSurface MountPowerSO-10RF Exposed Bottom Pad (2 Formed Leads)3Cut Tape (CT)e4Active3 (168 Hours)2EAR99NICKEL PALLADIUM GOLD165°C-65°C-FET General Purpose Power-73WDUALGULL WING-5A945MHz-PD5704510R-PDSO-G21-ENHANCEMENT MODE-SOURCE250mAAMPLIFIER-N-CHANNELLDMOS5A-14.5dB-5A-METAL-OXIDE SEMICONDUCTOR28VNoROHS3 Compliant-65VSINGLE65V45W---
-
--Surface MountPowerSO-10 Exposed Bottom Pad10Tubee0Obsolete3 (168 Hours)2EAR99Tin/Lead (Sn/Pb)150°C-65°CHIGH RELIABILITYFET General Purpose Power-4.75WDUALGULL WINGNOT SPECIFIED250mA960MHzNOT SPECIFIEDPD570022R-PDSO-G21SingleENHANCEMENT MODE4.75WSOURCE10mAAMPLIFIER65VN-CHANNELLDMOS250mA20V15dB-0.25A65VMETAL-OXIDE SEMICONDUCTOR28V-ROHS3 Compliant----2Wnonot_compliantNot Qualified
-
--Surface MountPowerSO-10 Exposed Bottom Pad4Tube-Obsolete3 (168 Hours)2EAR99-165°C-65°CHIGH RELIABILITYFET General Purpose Power-4.75WDUALFLATNOT SPECIFIED250mA960MHzNOT SPECIFIEDPD5700210R-PDSO-F21SingleENHANCEMENT MODE4.75WSOURCE10mAAMPLIFIER65VN-CHANNELLDMOS250mA20V15dB2W0.25A65VMETAL-OXIDE SEMICONDUCTOR28V-ROHS3 Compliant-------Not Qualified
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