STMicroelectronics PD57006STR-E
- Part Number:
- PD57006STR-E
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3585821-PD57006STR-E
- Description:
- TRANS RF N-CH FET POWERSO-10RF
- Datasheet:
- PD57006(S)-E
STMicroelectronics PD57006STR-E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics PD57006STR-E.
- Factory Lead Time25 Weeks
- MountSurface Mount
- Package / CasePowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
- Number of Pins3
- PackagingTape & Reel (TR)
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishNICKEL PALLADIUM GOLD
- Max Operating Temperature165°C
- Min Operating Temperature-65°C
- SubcategoryFET General Purpose Power
- Max Power Dissipation20W
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating1A
- Frequency945MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberPD57006
- Pin Count10
- JESD-30 CodeR-PDSO-F2
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation20W
- Case ConnectionSOURCE
- Current - Test70mA
- Transistor ApplicationAMPLIFIER
- Drain to Source Voltage (Vdss)65V
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Continuous Drain Current (ID)1A
- Gate to Source Voltage (Vgs)20V
- Gain15dB
- Max Output Power6W
- Drain Current-Max (Abs) (ID)1A
- Drain to Source Breakdown Voltage65V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
PD57006STR-E Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PD57006STR-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PD57006STR-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PD57006STR-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PD57006STR-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PD57006STR-E More Descriptions
6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
RF MOSFET Transistors RF Power Transistor N Chnl
Transistor RF FET N-CH 65V 1A 945MHz 3-Pin PowerSO-10RF T/R
Ptd New Mat & Pwr Solution |Stmicroelectronics PD57006STR-E
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TRANS RF N-CH FET POWERSO-10RF
RF MOSFET Transistors RF Power Transistor N Chnl
Transistor RF FET N-CH 65V 1A 945MHz 3-Pin PowerSO-10RF T/R
Ptd New Mat & Pwr Solution |Stmicroelectronics PD57006STR-E
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TRANS RF N-CH FET POWERSO-10RF
The three parts on the right have similar specifications to PD57006STR-E.
-
ImagePart NumberManufacturerFactory Lead TimeMountPackage / CaseNumber of PinsPackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionCurrent - TestTransistor ApplicationDrain to Source Voltage (Vdss)Polarity/Channel TypeTransistor TypeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)GainMax Output PowerDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyVoltage - TestRoHS StatusPbfree CodeReach Compliance CodePower - OutputAdditional FeatureView Compare
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PD57006STR-E25 WeeksSurface MountPowerSO-10RF Exposed Bottom Pad (2 Straight Leads)3Tape & Reel (TR)e4Active3 (168 Hours)2EAR99NICKEL PALLADIUM GOLD165°C-65°CFET General Purpose Power20WDUALFLATNOT SPECIFIED1A945MHzNOT SPECIFIEDPD5700610R-PDSO-F2Not Qualified1SingleENHANCEMENT MODE20WSOURCE70mAAMPLIFIER65VN-CHANNELLDMOS1A20V15dB6W1A65VMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliant-----
-
-Surface MountPowerSO-10 Exposed Bottom Pad3Tubee0Obsolete3 (168 Hours)2EAR99Tin/Lead (Sn/Pb)150°C-65°CFET General Purpose Power20WDUALFLATNOT SPECIFIED1A945MHzNOT SPECIFIEDPD570062R-PDSO-F2Not Qualified1SingleENHANCEMENT MODE20WSOURCE70mAAMPLIFIER65VN-CHANNELLDMOS1A20V15dB-1A65VMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliantnonot_compliant6W-
-
-Surface MountPowerSO-10 Exposed Bottom Pad4Tube-Obsolete3 (168 Hours)2EAR99-165°C-65°CFET General Purpose Power4.75WDUALFLATNOT SPECIFIED250mA960MHzNOT SPECIFIEDPD5700210R-PDSO-F2Not Qualified1SingleENHANCEMENT MODE4.75WSOURCE10mAAMPLIFIER65VN-CHANNELLDMOS250mA20V15dB2W0.25A65VMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliant---HIGH RELIABILITY
-
-Surface MountPowerSO-10 Exposed Bottom Pad4Tubee0Obsolete3 (168 Hours)2EAR99Tin/Lead (Sn/Pb)150°C-65°CFET General Purpose Power95WDUALFLATNOT SPECIFIED7A945MHzNOT SPECIFIEDPD570702R-PDSO-F2Not Qualified1SingleENHANCEMENT MODE95WSOURCE250mAAMPLIFIER65VN-CHANNELLDMOS7A20V14.7dB-7A65VMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliantnonot_compliant70WHIGH RELIABILITY
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