PD57006STR-E

STMicroelectronics PD57006STR-E

Part Number:
PD57006STR-E
Manufacturer:
STMicroelectronics
Ventron No:
3585821-PD57006STR-E
Description:
TRANS RF N-CH FET POWERSO-10RF
ECAD Model:
Datasheet:
PD57006(S)-E

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Specifications
STMicroelectronics PD57006STR-E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics PD57006STR-E.
  • Factory Lead Time
    25 Weeks
  • Mount
    Surface Mount
  • Package / Case
    PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e4
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    NICKEL PALLADIUM GOLD
  • Max Operating Temperature
    165°C
  • Min Operating Temperature
    -65°C
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    20W
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    1A
  • Frequency
    945MHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    PD57006
  • Pin Count
    10
  • JESD-30 Code
    R-PDSO-F2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    20W
  • Case Connection
    SOURCE
  • Current - Test
    70mA
  • Transistor Application
    AMPLIFIER
  • Drain to Source Voltage (Vdss)
    65V
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Continuous Drain Current (ID)
    1A
  • Gate to Source Voltage (Vgs)
    20V
  • Gain
    15dB
  • Max Output Power
    6W
  • Drain Current-Max (Abs) (ID)
    1A
  • Drain to Source Breakdown Voltage
    65V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    28V
  • RoHS Status
    ROHS3 Compliant
Description
PD57006STR-E Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PD57006STR-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PD57006STR-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PD57006STR-E More Descriptions
6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
RF MOSFET Transistors RF Power Transistor N Chnl
Transistor RF FET N-CH 65V 1A 945MHz 3-Pin PowerSO-10RF T/R
Ptd New Mat & Pwr Solution |Stmicroelectronics PD57006STR-E
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TRANS RF N-CH FET POWERSO-10RF
Product Comparison
The three parts on the right have similar specifications to PD57006STR-E.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Package / Case
    Number of Pins
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Current - Test
    Transistor Application
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Transistor Type
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Gain
    Max Output Power
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    FET Technology
    Voltage - Test
    RoHS Status
    Pbfree Code
    Reach Compliance Code
    Power - Output
    Additional Feature
    View Compare
  • PD57006STR-E
    PD57006STR-E
    25 Weeks
    Surface Mount
    PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
    3
    Tape & Reel (TR)
    e4
    Active
    3 (168 Hours)
    2
    EAR99
    NICKEL PALLADIUM GOLD
    165°C
    -65°C
    FET General Purpose Power
    20W
    DUAL
    FLAT
    NOT SPECIFIED
    1A
    945MHz
    NOT SPECIFIED
    PD57006
    10
    R-PDSO-F2
    Not Qualified
    1
    Single
    ENHANCEMENT MODE
    20W
    SOURCE
    70mA
    AMPLIFIER
    65V
    N-CHANNEL
    LDMOS
    1A
    20V
    15dB
    6W
    1A
    65V
    METAL-OXIDE SEMICONDUCTOR
    28V
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • PD57006S
    -
    Surface Mount
    PowerSO-10 Exposed Bottom Pad
    3
    Tube
    e0
    Obsolete
    3 (168 Hours)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    150°C
    -65°C
    FET General Purpose Power
    20W
    DUAL
    FLAT
    NOT SPECIFIED
    1A
    945MHz
    NOT SPECIFIED
    PD57006
    2
    R-PDSO-F2
    Not Qualified
    1
    Single
    ENHANCEMENT MODE
    20W
    SOURCE
    70mA
    AMPLIFIER
    65V
    N-CHANNEL
    LDMOS
    1A
    20V
    15dB
    -
    1A
    65V
    METAL-OXIDE SEMICONDUCTOR
    28V
    ROHS3 Compliant
    no
    not_compliant
    6W
    -
  • PD57002S-E
    -
    Surface Mount
    PowerSO-10 Exposed Bottom Pad
    4
    Tube
    -
    Obsolete
    3 (168 Hours)
    2
    EAR99
    -
    165°C
    -65°C
    FET General Purpose Power
    4.75W
    DUAL
    FLAT
    NOT SPECIFIED
    250mA
    960MHz
    NOT SPECIFIED
    PD57002
    10
    R-PDSO-F2
    Not Qualified
    1
    Single
    ENHANCEMENT MODE
    4.75W
    SOURCE
    10mA
    AMPLIFIER
    65V
    N-CHANNEL
    LDMOS
    250mA
    20V
    15dB
    2W
    0.25A
    65V
    METAL-OXIDE SEMICONDUCTOR
    28V
    ROHS3 Compliant
    -
    -
    -
    HIGH RELIABILITY
  • PD57070S
    -
    Surface Mount
    PowerSO-10 Exposed Bottom Pad
    4
    Tube
    e0
    Obsolete
    3 (168 Hours)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    150°C
    -65°C
    FET General Purpose Power
    95W
    DUAL
    FLAT
    NOT SPECIFIED
    7A
    945MHz
    NOT SPECIFIED
    PD57070
    2
    R-PDSO-F2
    Not Qualified
    1
    Single
    ENHANCEMENT MODE
    95W
    SOURCE
    250mA
    AMPLIFIER
    65V
    N-CHANNEL
    LDMOS
    7A
    20V
    14.7dB
    -
    7A
    65V
    METAL-OXIDE SEMICONDUCTOR
    28V
    ROHS3 Compliant
    no
    not_compliant
    70W
    HIGH RELIABILITY
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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