STMicroelectronics PD57018-E
- Part Number:
- PD57018-E
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2848001-PD57018-E
- Description:
- FET RF 65V 945MHZ PWRSO10
- ECAD Model:
-
- Datasheet:
- PD57018-E
STMicroelectronics PD57018-E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics PD57018-E.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time25 Weeks
- Contact PlatingTin
- MountSurface Mount
- Package / CasePowerSO-10 Exposed Bottom Pad
- Number of Pins3
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature165°C
- Min Operating Temperature-65°C
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC65V
- Max Power Dissipation31.7W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)250
- Current Rating2.5A
- Frequency945MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberPD57018
- Pin Count10
- JESD-30 CodeR-PDSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation31.7W
- Case ConnectionSOURCE
- Current - Test100mA
- Transistor ApplicationAMPLIFIER
- Drain to Source Voltage (Vdss)65V
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Continuous Drain Current (ID)2.5A
- Gate to Source Voltage (Vgs)20V
- Max Output Power18W
- Drain to Source Breakdown Voltage65V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Resistance760mOhm
- Voltage - Test28V
- Min Breakdown Voltage65V
- Power Gain16.5dB
- Height3.5mm
- Length7.5mm
- Width9.4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PD57018-E Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PD57018-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PD57018-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PD57018-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PD57018-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PD57018-E More Descriptions
Transistor MOSFET N-CH 65V 2.5A 4-Pin (2 2Tab) PowerSO-10RF (Formed lead) Tube
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETsSTMicroelectronics SCT
PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-1
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETsSTMicroelectronics SCT
PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-1
The three parts on the right have similar specifications to PD57018-E.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountPackage / CaseNumber of PinsPackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionCurrent - TestTransistor ApplicationDrain to Source Voltage (Vdss)Polarity/Channel TypeTransistor TypeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Output PowerDrain to Source Breakdown VoltageFET TechnologyDrain to Source ResistanceVoltage - TestMin Breakdown VoltagePower GainHeightLengthWidthRadiation HardeningRoHS StatusLead FreePbfree CodeTerminal FinishReach Compliance CodeQualification StatusGainDrain Current-Max (Abs) (ID)Power - OutputView Compare
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PD57018-EACTIVE (Last Updated: 8 months ago)25 WeeksTinSurface MountPowerSO-10 Exposed Bottom Pad3Tubee3Active3 (168 Hours)2EAR99165°C-65°CHIGH RELIABILITYFET General Purpose Power65V31.7WDUALGULL WING2502.5A945MHz30PD5701810R-PDSO-G21SingleENHANCEMENT MODE31.7WSOURCE100mAAMPLIFIER65VN-CHANNELLDMOS2.5A20V18W65VMETAL-OXIDE SEMICONDUCTOR760mOhm28V65V16.5dB3.5mm7.5mm9.4mmNoROHS3 CompliantLead Free-------- -
---Surface MountPowerSO-10 Exposed Bottom Pad10Tubee0Obsolete3 (168 Hours)2EAR99165°C-65°CHIGH RELIABILITYFET General Purpose Power-31.7WDUALGULL WINGNOT SPECIFIED2.5A945MHzNOT SPECIFIEDPD570182R-PDSO-G21SingleENHANCEMENT MODE31.7WSOURCE100mAAMPLIFIER65VN-CHANNELLDMOS2.5A20V18W65VMETAL-OXIDE SEMICONDUCTOR-28V------ROHS3 Compliant-noTin/Lead (Sn/Pb)not_compliantNot Qualified16.5dB--
-
---Surface MountPowerSO-10 Exposed Bottom Pad3Tubee0Obsolete3 (168 Hours)2EAR99150°C-65°C-FET General Purpose Power-20WDUALFLATNOT SPECIFIED1A945MHzNOT SPECIFIEDPD570062R-PDSO-F21SingleENHANCEMENT MODE20WSOURCE70mAAMPLIFIER65VN-CHANNELLDMOS1A20V-65VMETAL-OXIDE SEMICONDUCTOR-28V------ROHS3 Compliant-noTin/Lead (Sn/Pb)not_compliantNot Qualified15dB1A6W
-
---Surface MountPowerSO-10 Exposed Bottom Pad4Tube-Obsolete3 (168 Hours)2EAR99165°C-65°CHIGH RELIABILITYFET General Purpose Power-4.75WDUALFLATNOT SPECIFIED250mA960MHzNOT SPECIFIEDPD5700210R-PDSO-F21SingleENHANCEMENT MODE4.75WSOURCE10mAAMPLIFIER65VN-CHANNELLDMOS250mA20V2W65VMETAL-OXIDE SEMICONDUCTOR-28V------ROHS3 Compliant----Not Qualified15dB0.25A-
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