PD20010-E

STMicroelectronics PD20010-E

Part Number:
PD20010-E
Manufacturer:
STMicroelectronics
Ventron No:
2474898-PD20010-E
Description:
TRANS RF N-CH FET POWERSO-10RF
ECAD Model:
Datasheet:
PD20010-E

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Specifications
STMicroelectronics PD20010-E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics PD20010-E.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    25 Weeks
  • Mount
    Surface Mount
  • Package / Case
    PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Number of Pins
    3
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    165°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    ESD PROTECTION, HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    59W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    5A
  • Frequency
    2GHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    PD20010
  • Pin Count
    10
  • JESD-30 Code
    R-PDSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    59W
  • Case Connection
    SOURCE
  • Current - Test
    150mA
  • Transistor Application
    AMPLIFIER
  • Drain to Source Voltage (Vdss)
    40V
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Continuous Drain Current (ID)
    5A
  • Gate to Source Voltage (Vgs)
    15V
  • Gain
    11dB
  • Max Output Power
    15W
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain to Source Breakdown Voltage
    40V
  • Power - Output
    10W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    13.6V
  • RoHS Status
    ROHS3 Compliant
Description
PD20010-E Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PD20010-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PD20010-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PD20010-E More Descriptions
Transistor MOSFET N-CH 40V 5A 4-Pin (2 2Tab) PowerSO-10RF (Formed lead) Tube
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
RF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 5A; Power Dissipation Pd: 59W; Operating Frequency Min: -; Operating Frequency Max: 2GHz; RF Transistor Case: PowerSO-10RF; No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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