Fairchild/ON Semiconductor NZT45H8
- Part Number:
- NZT45H8
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3068778-NZT45H8
- Description:
- TRANS PNP 60V 8A SOT-223
- ECAD Model:
-
- Datasheet:
- NZT45H8
Fairchild/ON Semiconductor NZT45H8 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NZT45H8.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation1.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-8A
- Frequency40MHz
- Base Part NumberNZT45H8
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.5W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product40MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A 1V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency40MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage60V
- Emitter Base Voltage (VEBO)-5V
- hFE Min60
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NZT45H8 Overview
DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.As a result, the part has a transition frequency of 40MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 8A volts.
NZT45H8 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
NZT45H8 Applications
There are a lot of ON Semiconductor
NZT45H8 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.As a result, the part has a transition frequency of 40MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 8A volts.
NZT45H8 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
NZT45H8 Applications
There are a lot of ON Semiconductor
NZT45H8 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NZT45H8 More Descriptions
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT PNP 60V 8A 1500mW 4-Pin(3 Tab) SOT-223 T/R / TRANS PNP 60V 8A SOT-223
Bipolar Transistors - BJT PNP Power Transistor
10Ã×A 60V 1.5W 8A 40@4A1V 40MHz 1V@8A400mA PNP -55¡Í~ 150¡Í@(Tj) SOT-223-4L Bipolar Transistors - BJT ROHS
PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.
Bipolar Transistor; Transistor Polarity:PNP; DC Current Gain Min (hfe):40; Package/Case:SOT-223; C-E Breakdown Voltage:60V; DC Collector Current:8A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
BIPOLAR TRANSISTOR, PNP, -60V; Transisto; BIPOLAR TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:1.5W; DC Collector Current:8A; DC Current Gain hFE:60; No. of Pins:4
Trans GP BJT PNP 60V 8A 1500mW 4-Pin(3 Tab) SOT-223 T/R / TRANS PNP 60V 8A SOT-223
Bipolar Transistors - BJT PNP Power Transistor
10Ã×A 60V 1.5W 8A 40@4A1V 40MHz 1V@8A400mA PNP -55¡Í~ 150¡Í@(Tj) SOT-223-4L Bipolar Transistors - BJT ROHS
PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.
Bipolar Transistor; Transistor Polarity:PNP; DC Current Gain Min (hfe):40; Package/Case:SOT-223; C-E Breakdown Voltage:60V; DC Collector Current:8A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
BIPOLAR TRANSISTOR, PNP, -60V; Transisto; BIPOLAR TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:1.5W; DC Collector Current:8A; DC Current Gain hFE:60; No. of Pins:4
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