NX7002BKXBZ

Nexperia USA Inc. NX7002BKXBZ

Part Number:
NX7002BKXBZ
Manufacturer:
Nexperia USA Inc.
Ventron No:
3069650-NX7002BKXBZ
Description:
MOSFET 2N-CH 60V 0.26A 6DFN
ECAD Model:
Datasheet:
NX7002BKXBZ

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Specifications
Nexperia USA Inc. NX7002BKXBZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. NX7002BKXBZ.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-XFDFN Exposed Pad
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2015
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Max Power Dissipation
    285mW
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    6
  • Reference Standard
    IEC-60134
  • JESD-30 Code
    R-PDSO-N6
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Power - Max
    285mW
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.8 Ω @ 200mA, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    23.6pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    1nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Continuous Drain Current (ID)
    260mA
  • Drain Current-Max (Abs) (ID)
    0.33A
  • Drain-source On Resistance-Max
    3.2Ohm
  • DS Breakdown Voltage-Min
    60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • RoHS Status
    ROHS3 Compliant
Description
NX7002BKXBZ Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NX7002BKXBZ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NX7002BKXBZ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NX7002BKXBZ More Descriptions
Transistor MOSFET Array Dual N-CH 60V 330mA 8-Pin DFN1010B-6 T/RAvnet Japan
NX7002BKXB - 60 V, dual N-channel Trench MOSFET
MOSFET, DUAL N-CH, 60V, 0.26A, DFN1010B; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Source Voltage Vds:60V; On
MOSFET, DUAL N-CH, 60V, 0.26A, DFN1010B; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 260mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 285mW; Transistor Case Style: DFN1010B; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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