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NTMD6P02R2G

ON Semiconductor NTMD6P02R2G

Part Number:
NTMD6P02R2G
Manufacturer:
ON Semiconductor
Ventron No:
3069632-NTMD6P02R2G
Description:
MOSFET 2P-CH 20V 4.8A 8SOIC
ECAD Model:
Datasheet:
NTMD6P02R2G

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Specifications
ON Semiconductor NTMD6P02R2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMD6P02R2G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    29 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    33mOhm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Max Power Dissipation
    750mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -6A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    NTMD6P02
  • Pin Count
    8
  • Number of Outputs
    1
  • Max Output Current
    6A
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    33m Ω @ 6.2A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1700pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    4.8A
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 4.5V
  • Rise Time
    20ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    50 ns
  • Turn-Off Delay Time
    85 ns
  • Continuous Drain Current (ID)
    7.8A
  • Threshold Voltage
    -880mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    -20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Feedback Cap-Max (Crss)
    450 pF
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTMD6P02R2G Description
This device contains two specialized N-Channel MOSFETs in a twin PQFN package. The switch node has been internally connected to facilitate the insertion and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been developed to provide optimal power efficiency.

NTMD6P02R2G Features
? Longer Battery Life and Greater Efficiency
? Level Gate Drive Logic
? Small Dual SOIC-8 Surface Mount Package.
? Diode Demonstrates Fast and Soft Recovery
? Specified Avalanche Energy
? These devices are RoHS compliant and Pb-free.

NTMD6P02R2G Applications
Notebook PC
NTMD6P02R2G More Descriptions
Transistor MOSFET Array Dual P-CH 20V 7.8A 8-Pin SOIC T/R - Tape and Reel
P-Channel 20 V 33 mOhm 2 W Surface Mount Power MOSFET - SOIC-8
NTMD6P02R2G, Dual MOSFET Power Driver 6A, 8-Pin SOIC | ON Semiconductor NTMD6P02R2G
NTMD6P02: Power MOSFET 20V 7.8A 33 mOhm Dual P-Channel SO-8
Dual P-Channel Power MOSFET -20V -6A 33mΩ
MOSFET, P, 20V, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.8A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -880mV; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: MOSFET; Voltage Vds Typ: -20V; Voltage Vgs Rds on Measurement: -4.5V
Product Comparison
The three parts on the right have similar specifications to NTMD6P02R2G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Outputs
    Max Output Current
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Finish
    Reach Compliance Code
    Qualification Status
    Configuration
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Terminal Position
    Polarity/Channel Type
    Turn On Delay Time
    Power - Max
    Drain Current-Max (Abs) (ID)
    View Compare
  • NTMD6P02R2G
    NTMD6P02R2G
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    29 Weeks
    Tin
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    33mOhm
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
    Other Transistors
    -20V
    750mW
    GULL WING
    260
    -6A
    40
    NTMD6P02
    8
    1
    6A
    2
    Dual
    ENHANCEMENT MODE
    2W
    2 P-Channel (Dual)
    SWITCHING
    33m Ω @ 6.2A, 4.5V
    1.2V @ 250μA
    1700pF @ 16V
    4.8A
    35nC @ 4.5V
    20ns
    20V
    50 ns
    85 ns
    7.8A
    -880mV
    12V
    -20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    450 pF
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTMD2P01R2
    NTMD2P01R2
    ON Semiconductor
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e0
    -
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    -16V
    710mW
    GULL WING
    240
    -2.3A
    30
    -
    8
    -
    -
    2
    -
    ENHANCEMENT MODE
    2W
    2 P-Channel (Dual)
    SWITCHING
    100m Ω @ 2.4A, 4.5V
    1.5V @ 250μA
    750pF @ 16V
    -
    18nC @ 4.5V
    35ns
    16V
    29 ns
    33 ns
    2.3A
    -
    10V
    -16V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    Tin/Lead (Sn/Pb)
    not_compliant
    Not Qualified
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    0.1Ohm
    9A
    350 mJ
    -
    -
    -
    -
    -
    NTMD6P02R2G vs NTMD2P01R2
  • NTMD2C02R2G
    NTMD2C02R2G
    ON Semiconductor
    OBSOLETE (Last Updated: 1 day ago)
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    20V
    2W
    GULL WING
    260
    2A
    40
    -
    8
    -
    -
    2
    -
    ENHANCEMENT MODE
    2W
    N and P-Channel
    SWITCHING
    43m Ω @ 4A, 4.5V
    1.2V @ 250μA
    1100pF @ 10V
    5.2A 3.4A
    20nC @ 4.5V
    40ns
    -
    35 ns
    35 ns
    3.4A
    -
    12V
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    Surface Mount
    Tin (Sn)
    -
    Not Qualified
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    0.043Ohm
    -
    -
    DUAL
    N-CHANNEL AND P-CHANNEL
    -
    -
    -
    NTMD6P02R2G vs NTMD2C02R2G
  • NTMD4820NR2G
    NTMD4820NR2G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    2 Weeks
    Tin
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    -
    -
    FET General Purpose Power
    -
    1.29W
    GULL WING
    -
    -
    -
    NTMD4820N
    8
    -
    -
    1
    Dual
    ENHANCEMENT MODE
    1.28W
    2 N-Channel (Dual)
    SWITCHING
    20m Ω @ 7.5A, 10V
    3V @ 250μA
    940pF @ 15V
    4.9A
    7.7nC @ 4.5V
    4ns
    -
    4 ns
    21 ns
    6.4A
    -
    20V
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    1.5mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    0.02Ohm
    -
    -
    -
    -
    9.4 ns
    750mW
    4.9A
    NTMD6P02R2G vs NTMD4820NR2G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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