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NTMD2C02R2G

ON Semiconductor NTMD2C02R2G

Part Number:
NTMD2C02R2G
Manufacturer:
ON Semiconductor
Ventron No:
2848346-NTMD2C02R2G
Description:
MOSFET N/P-CH 20V 8SOIC
ECAD Model:
Datasheet:
NTMD2C02R2G

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Specifications
ON Semiconductor NTMD2C02R2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMD2C02R2G.
  • Lifecycle Status
    OBSOLETE (Last Updated: 1 day ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    20V
  • Max Power Dissipation
    2W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    2A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    43m Ω @ 4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1100pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    5.2A 3.4A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 4.5V
  • Rise Time
    40ns
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    3.4A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain-source On Resistance-Max
    0.043Ohm
  • Drain to Source Breakdown Voltage
    20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
NTMD2C02R2G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTMD2C02R2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTMD2C02R2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NTMD2C02R2G More Descriptions
Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual
Trans MOSFET N/P-CH 20V 5.2A/3.4A 8-Pin SOIC N T/R - Tape and Reel
Power Field-Effect Transistor, 5.2A I(D), 20V, 0.043ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount N and P-Channel SEPARATE 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 5.2A 3.4A 3.4A 2W 35ns
Product Comparison
The three parts on the right have similar specifications to NTMD2C02R2G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    RoHS Status
    Lead Free
    Factory Lead Time
    Contact Plating
    Surface Mount
    Base Part Number
    Element Configuration
    Turn On Delay Time
    Power - Max
    Drain Current-Max (Abs) (ID)
    Height
    Length
    Width
    Radiation Hardening
    Drain to Source Voltage (Vdss)
    Feedback Cap-Max (Crss)
    Reach Compliance Code
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • NTMD2C02R2G
    NTMD2C02R2G
    ON Semiconductor
    OBSOLETE (Last Updated: 1 day ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    20V
    2W
    DUAL
    GULL WING
    260
    2A
    40
    8
    Not Qualified
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    2W
    N and P-Channel
    SWITCHING
    43m Ω @ 4A, 4.5V
    1.2V @ 250μA
    1100pF @ 10V
    5.2A 3.4A
    20nC @ 4.5V
    40ns
    N-CHANNEL AND P-CHANNEL
    35 ns
    35 ns
    3.4A
    12V
    0.043Ohm
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTMD4820NR2G
    NTMD4820NR2G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    -
    -
    FET General Purpose Power
    -
    1.29W
    -
    GULL WING
    -
    -
    -
    8
    -
    1
    -
    ENHANCEMENT MODE
    1.28W
    2 N-Channel (Dual)
    SWITCHING
    20m Ω @ 7.5A, 10V
    3V @ 250μA
    940pF @ 15V
    4.9A
    7.7nC @ 4.5V
    4ns
    -
    4 ns
    21 ns
    6.4A
    20V
    0.02Ohm
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    ROHS3 Compliant
    Lead Free
    2 Weeks
    Tin
    YES
    NTMD4820N
    Dual
    9.4 ns
    750mW
    4.9A
    1.5mm
    5mm
    4mm
    No
    -
    -
    -
    -
    -
    NTMD2C02R2G vs NTMD4820NR2G
  • NTMD6P02R2SG
    NTMD6P02R2SG
    ON Semiconductor
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    -
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
    Other Transistors
    -20V
    750mW
    -
    GULL WING
    260
    -7.8A
    40
    8
    Not Qualified
    2
    -
    ENHANCEMENT MODE
    2W
    2 P-Channel (Dual)
    SWITCHING
    33m Ω @ 6.2A, 4.5V
    1.2V @ 250μA
    1700pF @ 16V
    -
    35nC @ 4.5V
    65ns
    -
    80 ns
    50 ns
    4.8A
    12V
    0.033Ohm
    -20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    RoHS Compliant
    Lead Free
    -
    -
    YES
    NTMD6P02
    Dual
    -
    -
    6.2A
    -
    -
    -
    -
    20V
    450 pF
    -
    -
    -
    NTMD2C02R2G vs NTMD6P02R2SG
  • NTMD6N02R2
    NTMD6N02R2
    ON Semiconductor
    OBSOLETE (Last Updated: 1 day ago)
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e0
    no
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Tin/Lead (Sn/Pb)
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    20V
    730mW
    -
    GULL WING
    240
    6A
    30
    8
    Not Qualified
    2
    -
    ENHANCEMENT MODE
    2W
    2 N-Channel (Dual)
    SWITCHING
    35m Ω @ 6A, 4.5V
    1.2V @ 250μA
    1100pF @ 16V
    -
    20nC @ 4.5V
    35ns
    -
    80 ns
    45 ns
    3.92A
    12V
    0.035Ohm
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    Non-RoHS Compliant
    Contains Lead
    -
    -
    YES
    NTMD6N02
    Dual
    -
    -
    -
    -
    -
    -
    -
    -
    -
    not_compliant
    30A
    360 mJ
    NTMD2C02R2G vs NTMD6N02R2
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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