ON Semiconductor NTLJD4116NT1G
- Part Number:
- NTLJD4116NT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2848385-NTLJD4116NT1G
- Description:
- MOSFET 2N-CH 30V 2.5A 6-WDFN
- ECAD Model:
-
- Datasheet:
- NTLJD4116NT1G
ON Semiconductor NTLJD4116NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTLJD4116NT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / Case6-WDFN Exposed Pad
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- Max Power Dissipation710mW
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Current Rating4.6A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.5W
- Case ConnectionDRAIN
- Turn On Delay Time4.8 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs70m Ω @ 2A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds427pF @ 15V
- Current - Continuous Drain (Id) @ 25°C2.5A
- Gate Charge (Qg) (Max) @ Vgs6.5nC @ 4.5V
- Rise Time11.8ns
- Fall Time (Typ)11.8 ns
- Turn-Off Delay Time14.2 ns
- Continuous Drain Current (ID)3.7A
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)3A
- Drain-source On Resistance-Max0.09Ohm
- Drain to Source Breakdown Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height750μm
- Length2mm
- Width2mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NTLJD4116NT1G Description
ROHM N-channel and P-channel MOSFETs NTLJD4116NT1G feature low on-resistance and high switching speed. It has a wide lineup from small signal MOSFETs to power MOSFETs and can be used in various applications. NTLJD4116NT1G Features
? WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction ? 2x2 mm Footprint Same as SC?88 ? Lowest RDS(on) Solution in 2x2 mm Package ? 1.5 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level ? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments ? This is a Pb?Free Device
NTLJD4116NT1G Applications
? DC?DC Converters (Buck and Boost Circuits) ? Low Side Load Switch ? Optimized for Battery and Load Management Applications in Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc. ? Level Shift for High Side Load Switch
ROHM N-channel and P-channel MOSFETs NTLJD4116NT1G feature low on-resistance and high switching speed. It has a wide lineup from small signal MOSFETs to power MOSFETs and can be used in various applications. NTLJD4116NT1G Features
? WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction ? 2x2 mm Footprint Same as SC?88 ? Lowest RDS(on) Solution in 2x2 mm Package ? 1.5 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level ? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments ? This is a Pb?Free Device
NTLJD4116NT1G Applications
? DC?DC Converters (Buck and Boost Circuits) ? Low Side Load Switch ? Optimized for Battery and Load Management Applications in Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc. ? Level Shift for High Side Load Switch
NTLJD4116NT1G More Descriptions
Transistor MOSFET Array Dual N-CH 30V 3.7A 6-Pin WDFN T/R - Tape and Reel
MOSFETs- Power and Small Signal NFET 2X2 30V 4.6A 70MOHM
Power MOSFET 30 V 4.6 A Cool Dual N-Channel 2x2 mm WDFN Package
Dual N-Channel 30 V 70 mO Surface Mount Power Mosfet - WDFN-6 (2x2)
NTLJD4116NT1G Dual N-channel MOSFET Transistor, 2.5 A, 30 V, 6-Pin WDFN | ON Semiconductor NTLJD4116NT1G
MOSFET, DUAL N-CH, 30V, 3.7A, WDFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.7A; Source Voltage Vds:30V; On Resistance
N Channel Mosfet, 30V, Wdfn6, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:3.7A; Continuous Drain Current Id P Channel:3.7A Rohs Compliant: Yes |Onsemi NTLJD4116NT1G
MOSFET, DUAL N-CH, 30V, 3.7A, WDFN; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; Power Dissipation Pd: 1.5W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: uCool Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
MOSFETs- Power and Small Signal NFET 2X2 30V 4.6A 70MOHM
Power MOSFET 30 V 4.6 A Cool Dual N-Channel 2x2 mm WDFN Package
Dual N-Channel 30 V 70 mO Surface Mount Power Mosfet - WDFN-6 (2x2)
NTLJD4116NT1G Dual N-channel MOSFET Transistor, 2.5 A, 30 V, 6-Pin WDFN | ON Semiconductor NTLJD4116NT1G
MOSFET, DUAL N-CH, 30V, 3.7A, WDFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.7A; Source Voltage Vds:30V; On Resistance
N Channel Mosfet, 30V, Wdfn6, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:3.7A; Continuous Drain Current Id P Channel:3.7A Rohs Compliant: Yes |Onsemi NTLJD4116NT1G
MOSFET, DUAL N-CH, 30V, 3.7A, WDFN; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; Power Dissipation Pd: 1.5W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: uCool Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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