ON Semiconductor NTLJD3119CTBG
- Part Number:
- NTLJD3119CTBG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069659-NTLJD3119CTBG
- Description:
- MOSFET N/P-CH 20V 6WDFN
- Datasheet:
- NTLJD3119CTBG
ON Semiconductor NTLJD3119CTBG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTLJD3119CTBG.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time9 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case6-WDFN Exposed Pad
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesµCool™
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation710mW
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNTLJD3119C
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation710mW
- Turn On Delay Time5.2 ns
- FET TypeN and P-Channel
- Rds On (Max) @ Id, Vgs65m Ω @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds271pF @ 10V
- Current - Continuous Drain (Id) @ 25°C2.6A 2.3A
- Gate Charge (Qg) (Max) @ Vgs3.7nC @ 4.5V
- Rise Time13.2ns
- Drain to Source Voltage (Vdss)20V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Fall Time (Typ)13.2 ns
- Turn-Off Delay Time13.7 ns
- Continuous Drain Current (ID)4.6A
- Threshold Voltage700mV
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)3.8A
- Drain to Source Breakdown Voltage-20V
- Pulsed Drain Current-Max (IDM)18A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs700 mV
- Height750μm
- Length2mm
- Width2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTLJD3119CTBG Description
Complementary power MOSFET is a device that contains both P-channel and N-channel MOSFET in the same package. This makes them very suitable for low-power non-isolated point loads.
NTLJD3119CTBG Features
? Complementary N?Channel and P?Channel MOSFET ? WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction ? Footprint Same as SC?88 Package ? Leading Edge Trench Technology for Low On Resistance ? 1.8 V Gate Threshold Voltage ? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments ? This is a Pb?Free Device
NTLJD3119CTBG Applications
? Synchronous DC?DC Conversion Circuits ? Load/Power Management of Portable Devices like PDA’s, Cellular Phones and Hard Drives ? Color Display and Camera Flash Regulators
Complementary power MOSFET is a device that contains both P-channel and N-channel MOSFET in the same package. This makes them very suitable for low-power non-isolated point loads.
NTLJD3119CTBG Features
? Complementary N?Channel and P?Channel MOSFET ? WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction ? Footprint Same as SC?88 Package ? Leading Edge Trench Technology for Low On Resistance ? 1.8 V Gate Threshold Voltage ? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments ? This is a Pb?Free Device
NTLJD3119CTBG Applications
? Synchronous DC?DC Conversion Circuits ? Load/Power Management of Portable Devices like PDA’s, Cellular Phones and Hard Drives ? Color Display and Camera Flash Regulators
NTLJD3119CTBG More Descriptions
N & P Channel 20 V 65 mOhm 710 mW Surface Mount Power MOSFET - WDFN6
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R / MOSFET N/P-CH 20V 6WDFN
MOSFET, N & P CH, 20V, 4.6A, WDFN-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; Power Dissipation Pd: 2.3W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
Power Field-Effect Transistor, 2.6A I(D), 20V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R / MOSFET N/P-CH 20V 6WDFN
MOSFET, N & P CH, 20V, 4.6A, WDFN-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; Power Dissipation Pd: 2.3W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
Power Field-Effect Transistor, 2.6A I(D), 20V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 September 2023
STM32F103C6T6 Microcontroller:Features, Package and Application
Ⅰ. What is STM32F103C6T6?Ⅱ. 3D Model and pins of STM32F103C6T6Ⅲ. Technical parametersⅣ. Features of STM32F103C6T6Ⅴ. Package of STM32F103C6T6Ⅵ. Application of STM32F103C6T6Ⅶ. Components of the STM32F103C6T6 minimum system boardⅧ.... -
19 September 2023
Comparison Between 2N3055 vs TIP3055
Ⅰ. Overview of 2N3055Ⅱ. Overview of TIP3055Ⅲ. Pin diagram comparisonⅣ. Technical parametersⅤ. Comparison of current amplification factorsⅥ. Package comparisonⅦ. Symbol of 2N3055 and TIP3055Ⅷ. Application scenarios comparisonⅨ. Can... -
19 September 2023
STM32F303CCT6 Microcontroller: Footprint, Equivalent and Advantages
Ⅰ. What is STM32F303CCT6?Ⅱ. 3D Model and footprint of STM32F303CCT6Ⅲ. Technical parametersⅣ. Features of STM32F303CCT6Ⅴ. Package and packaging of STM32F303CCT6Ⅵ. Typical and maximum current consumptionⅦ. Advantages of STM32F303CCT6... -
20 September 2023
ATMEGA8-16PU Microcontroller: Symbol, Equivalent and Electrical Characteristics
Ⅰ. Overview of ATMEGA8-16PUⅡ. Symbol, Footprint and Pin Configuration of ATMEGA8-16PUⅢ. Technical parametersⅣ. Electrical characteristics of ATMEGA8-16PUⅤ. What is the difference between ATMEGA8-16PU and ATMEGA8-16PI?Ⅵ. I/O Memory of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.