ON Semiconductor NTJD4401NT1G

Name: NTJD4401NT1G
Brand: ON Semiconductor
SKU: 2474765-NTJD4401NT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTJD4401NT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2474765-NTJD4401NT1G

Description:: MOSFET 2N-CH 20V 0.63A SOT-363

ECAD Model:

Datasheet:: NTJD4401NT1G

Specifications

ON Semiconductor NTJD4401NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTJD4401NT1G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
17 Weeks
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
220mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Max Power Dissipation
270mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
630mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
NTJD4401N
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
270mW
Turn On Delay Time
83 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
375m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
46pF @ 20V
Gate Charge (Qg) (Max) @ Vgs
3nC @ 4.5V
Rise Time
227ns
Fall Time (Typ)
227 ns
Turn-Off Delay Time
786 ns
Continuous Drain Current (ID)
630mA
Threshold Voltage
920mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
920 mV
Feedback Cap-Max (Crss)
5 pF
Height
990.6μm
Length
2.1844mm
Width
1.3462mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTJD4401NT1G   Description
A small signal is an AC signal superimposed on a bias signal (or on a DC constant signal) (more professionally, a signal with a zero average value). Decomposing the signal into two components allows the use of superposition techniques to simplify further analysis. NTJD4401NT1G   Features
? Small Footprint (2 x 2 mm) ? Low Gate Charge N?Channel Device ? ESD Protected Gate ? Same Package as SC?70 (6 Leads) ? AEC?Q101 Qualified and PPAP Capable ? NVJD4401N ? These Devices are Pb?Free and are RoHS Compliant    NTJD4401NT1G Applications
? Load Power Switching ? Li?Ion Battery Supplied Devices ? Cell Phones, Media Players, Digital Cameras, PDAs ? DC?DC Conversion

NTJD4401NT1G More Descriptions

Dual N-Channel Small Signal MOSFET with ESD Protection 20V 630mA 375mΩ
MOSFET 2N-CH 20V 0.63A SOT-363 / Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R
Dual N-Channel 20 V 220 mOhm 270 mW Surface Mount Small Signal MOSFET SOT-363
MOSFET Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:630mA; Source Voltage Vds:20V; On Resistance
Mosfet, Dual N Channel, 20V, 0.63A, Sot-363-6; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:910Ma; No. Of Pins:6Pins; Product Range:-Rohs Compliant: Yes |Onsemi NTJD4401NT1G.
MOSFET TRANSISTOR; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 920mV; Power Dissipation Pd: 270mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 630mA; Current Id Max: 630mA; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.29ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 12V

Product Comparison

The three parts on the right have similar specifications to NTJD4401NT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Nominal Vgs

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

HTS Code

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

Mount

Drain Current-Max (Abs) (ID)

Drain to Source Voltage (Vdss)

View Compare
NTJD4401NT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

17 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1997

e3

yes

Active

1 (Unlimited)

6

EAR99

220mOhm

Tin (Sn)

FET General Purpose Power

20V

270mW

GULL WING

260

630mA

40

NTJD4401N

6

2

Dual

ENHANCEMENT MODE

270mW

83 ns

2 N-Channel (Dual)

SWITCHING

375m Ω @ 630mA, 4.5V

1.5V @ 250μA

46pF @ 20V

3nC @ 4.5V

227ns

227 ns

786 ns

630mA

920mV

12V

20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

920 mV

5 pF

990.6μm

2.1844mm

1.3462mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
NTJD4401NT1

ON Semiconductor

OBSOLETE (Last Updated: 1 day ago)

-

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e0

no

Obsolete

1 (Unlimited)

6

EAR99

-

Tin/Lead (Sn80Pb20)

FET General Purpose Power

20V

270mW

GULL WING

240

630mA

30

NTJD4401N

6

2

Dual

ENHANCEMENT MODE

270mW

-

2 N-Channel (Dual)

SWITCHING

375m Ω @ 630mA, 4.5V

1.5V @ 250μA

46pF @ 20V

3nC @ 4.5V

227ns

227 ns

786 ns

630mA

-

12V

20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

5 pF

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

8541.21.00.95

not_compliant

Not Qualified

0.375Ohm

-

-

-

NTJD4401NT1G vs NTJD4401NT1
NTJD2152PT1G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 20 hours ago)

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

-

Tin (Sn)

Other Transistors

-8V

270mW

GULL WING

260

-775mA

40

NTJD2152P

6

2

Dual

ENHANCEMENT MODE

270mW

-

2 P-Channel (Dual)

SWITCHING

300m Ω @ 570mA, 4.5V

1V @ 250μA

225pF @ 8V

4nC @ 4.5V

23ns

23 ns

50 ns

775mA

-

8V

-8V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

40 pF

-

-

-

-

-

RoHS Compliant

Lead Free

-

-

Not Qualified

0.3Ohm

Surface Mount

0.775A

-

NTJD4401NT1G vs NTJD2152PT1G
NTJD4152PT1

ON Semiconductor

-

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e0

-

Obsolete

1 (Unlimited)

6

EAR99

-

Tin/Lead (Sn/Pb)

Other Transistors

-20V

272mW

GULL WING

240

-880mA

30

NTJD4152P

6

2

Dual

ENHANCEMENT MODE

272mW

-

2 P-Channel (Dual)

SWITCHING

260m Ω @ 880mA, 4.5V

1.2V @ 250μA

155pF @ 20V

2.2nC @ 4.5V

6.5ns

6.5 ns

13.5 ns

880mA

-

12V

-20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

not_compliant

Not Qualified

-

Surface Mount

0.88A

20V

NTJD4401NT1G vs NTJD4152PT1

Certification

Related parts for NTJD4401NT1G

NTJD2152PT2

ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363
NTJD4001NT2G

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MOSFET 2N-CH 30V 0.25A SOT363
NTJD1155LT1

ON Semiconductor

MOSFET N/P-CH 8V 1.3A SOT-363
NTJD4401NT1

ON Semiconductor

MOSFET 2N-CH 20V 0.63A SOT363
NTJD2152PT1G

ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363
NTJD1155LT1G

ON Semiconductor

MOSFET N/P-CH 8V 1.3A SOT-363
NTJD4152PT1

ON Semiconductor

MOSFET 2P-CH 20V 0.88A SOT-363
NTJD2152PT4G

ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363
NTJD2152PT2G

ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363
NTJD4401NT4G

ON Semiconductor

MOSFET 2N-CH 20V 0.63A SOT363

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NTJD4401NT1G Specification

Part Number	Manufacturers	Description	Stock	Price
NTJD4401NT1G DISTI #	ON Semiconductor	MOSFET 2N-CH 20V 0.63A SOT-363 RoHS: Compliant	20324	1 $0.58 10 $0.406 100 $0.2667 500 $0.15762 1000 $0.12124
NTJD4401NT1G DISTI #	ON Semiconductor	MOSFET 2N-CH 20V 0.63A SOT-363 RoHS: Compliant	20324	1 $0.58 10 $0.406 100 $0.2667 500 $0.15762 1000 $0.12124
NTJD4401NT1G DISTI #	ON Semiconductor	MOSFET 2N-CH 20V 0.63A SOT-363 RoHS: Compliant	18000	3000 $0.10593
NTJD4401NT1G DISTI #	ON Semiconductor	Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R - Tape RoHS: Compliant	0	3000 $0.0629 6000 $0.0629 12000 $0.0619 18000 $0.0609 30000 $0.0599
NTJD4401NT1G DISTI #	ON Semiconductor	Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R (Alt: RoHS: Compliant	0
NTJD4401NT1G DISTI #	ON Semiconductor	Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R - Prod RoHS: Compliant	0	1 $0.446 25 $0.31 50 $0.228 100 $0.146 250 $0.135 500 $0.124 1000 $0.113
NTJD4401NT1G DISTI #	ON Semiconductor	MOSFET, DUAL N CHANNEL, 20V, 0.63A, SOT-363-6, Tr	0	1 $0.097 3000 $0.097
NTJD4401NT1G DISTI #	ON Semiconductor	DUAL N CHANNEL MOSFET, 20V, SC-88, Transistor Pol	0	1 $0.446 25 $0.31 50 $0.228 100 $0.146 250 $0.135 500 $0.124 1000 $0.113
NTJD4401NT1G. DISTI #	ON Semiconductor	NFET SC88 20V 630MA 375MO , ROHS COMPLIANT: YES	0	1 $0.063 12000 $0.062 18000 $0.061 30000 $0.06
NTJD4401NT1G DISTI #	ON Semiconductor	MOSFET, Dual N-Ch, VDSS 27V, RDS(ON) 0.29Ohm, RoHS: Compliant	0	1 $0.157 10 $0.141 100 $0.127 1000 $0.115 3000 $0.097
NTJD4401NT1G DISTI #	ON Semiconductor	MOSFET 20V Dual N-Channel ESD Protection RoHS: Compliant	486	1 $0.44 10 $0.304 100 $0.14 1000 $0.107 3000 $0.091 9000 $0.083 24000 $0.078 45000 $0.07
NTJD4401NT1 DISTI #	ON Semiconductor	MOSFET 20V Dual N-Channel RoHS: Not Compliant	0
NTJD4401NT1G DISTI #	ON Semiconductor	MOSFET Transistor, N-Channel, SOT-363	10212	1 $1 4001 $0.175 9144 $0.15
NTJD4401NT1G DISTI #	ON Semiconductor	INSTOCK	44766
NTJD4401NT1G DISTI #		INSTOCK	2800
NTJD4401NT1G DISTI #	ON Semiconductor	MOSFET TRANSISTOR RoHS: Compliant	2796	5 $0.267 25 $0.256 100 $0.113 250 $0.108 500 $0.0892
NTJD4401NT1G DISTI #	ON Semiconductor	Trans MOSFET N-CH 20V 0.91A 6-Pin SOT-363 T/R RoHS: Compliant	25	25 $0.177
NTJD4401NT1G DISTI #	ON Semiconductor	Trans MOSFET N-CH 20V 0.91A 6-Pin SOT-363 T/R RoHS: Compliant	1277	25 $0.2599 50 $0.2339 100 $0.133
NTJD4401NT1G DISTI #	ON Semiconductor	MOSFET TRANSISTOR RoHS: Compliant	1546	1 $0.697 10 $0.481 100 $0.222

NTJD440~~(5)~~
NTJD44~~(5)~~
NTJD4~~(18)~~
NTJD~~(28)~~
NTJ~~(40)~~

ON Semiconductor NTJD4401NT1G

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