ON Semiconductor NTJD4105CT1G
- Part Number:
- NTJD4105CT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2473843-NTJD4105CT1G
- Description:
- MOSFET N/P-CH 20V/8V SOT-363
- Datasheet:
- NTJD4105CT1G
ON Semiconductor NTJD4105CT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTJD4105CT1G.
- Lifecycle StatusACTIVE (Last Updated: 20 hours ago)
- Factory Lead Time19 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance220mOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation270mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating630mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNTJD4105C
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation550mW
- Turn On Delay Time83 ns
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs375m Ω @ 630mA, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds46pF @ 20V
- Current - Continuous Drain (Id) @ 25°C630mA 775mA
- Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
- Rise Time23ns
- Drain to Source Voltage (Vdss)20V 8V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Fall Time (Typ)36 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)775mA
- Threshold Voltage920mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-8V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs920 mV
- Feedback Cap-Max (Crss)5 pF
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTJD4105CT1G Description
NTJD4105CT1G is a Small signal that you're operating our device at a limited range of voltage or current where the characteristic curve is linear . If you change the Quiencent point(Operating Point) to another area on the curve , then it may still be linear over the range of a small signal
NTJD4105CT1G Features
? Complementary N and P Channel Device ? Leading ?8.0 V Trench for Low RDS(on) Performance ? ESD Protected Gate ? ESD Rating: Class 1 ? SC?88 Package for Small Footprint (2 x 2 mm) ? Pb?Free Packages are Available
NTJD4105CT1G Applications
? DC?DC Conversion ? Load/Power Switching ? Single or Dual Cell Li?Ion Battery Supplied Devices ? Cell Phones, MP3s, Digital Cameras, PDAs
NTJD4105CT1G is a Small signal that you're operating our device at a limited range of voltage or current where the characteristic curve is linear . If you change the Quiencent point(Operating Point) to another area on the curve , then it may still be linear over the range of a small signal
NTJD4105CT1G Features
? Complementary N and P Channel Device ? Leading ?8.0 V Trench for Low RDS(on) Performance ? ESD Protected Gate ? ESD Rating: Class 1 ? SC?88 Package for Small Footprint (2 x 2 mm) ? Pb?Free Packages are Available
NTJD4105CT1G Applications
? DC?DC Conversion ? Load/Power Switching ? Single or Dual Cell Li?Ion Battery Supplied Devices ? Cell Phones, MP3s, Digital Cameras, PDAs
NTJD4105CT1G More Descriptions
NTJD4105C: Small Signal MOSFET 20V 775mA 220 mOhm Dual Complementary SC-88/SC70-6/SOT-363
MOSFET N/P-CH 20V/8V SOT-363 / Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R
Small Signal Field-Effect Transistor, 0.63A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N/P Channel, 20V, 0.63A, Sot-363-6; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:8V; Continuous Drain Current Id N Channel:630Ma; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NTJD4105CT1G.
MOSFET, N & P CH, 20V, 0.63A, SOT-363-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 920mV; Power Dissipation Pd: 270mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
MOSFET N/P-CH 20V/8V SOT-363 / Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R
Small Signal Field-Effect Transistor, 0.63A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N/P Channel, 20V, 0.63A, Sot-363-6; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:8V; Continuous Drain Current Id N Channel:630Ma; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NTJD4105CT1G.
MOSFET, N & P CH, 20V, 0.63A, SOT-363-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 920mV; Power Dissipation Pd: 270mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
The three parts on the right have similar specifications to NTJD4105CT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Polarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyFET FeatureNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountVoltage - Rated DCJESD-30 CodeQualification StatusDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxReach Compliance CodeView Compare
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NTJD4105CT1GACTIVE (Last Updated: 20 hours ago)19 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)6EAR99220mOhmTin (Sn)Other Transistors270mWGULL WING260630mA40NTJD4105C62DualENHANCEMENT MODE550mW83 nsN and P-ChannelSWITCHING375m Ω @ 630mA, 4.5V1.5V @ 250μA46pF @ 20V630mA 775mA3nC @ 4.5V23ns20V 8VN-CHANNEL AND P-CHANNEL36 ns50 ns775mA920mV8V-8VMETAL-OXIDE SEMICONDUCTORLogic Level Gate920 mV5 pF1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free--------
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--Surface Mount6-TSSOP, SC-88, SOT-363--SILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)6EAR99-Tin (Sn)Other Transistors270mWGULL WING260-775mANOT SPECIFIEDNTJD2152P62DualENHANCEMENT MODE270mW-2 P-Channel (Dual)SWITCHING300m Ω @ 570mA, 4.5V1V @ 250μA225pF @ 8V-4nC @ 4.5V23ns--23 ns50 ns775mA-8V-8VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-40 pF-----RoHS CompliantLead FreeSurface Mount-8VR-PDSO-G6Not Qualified0.775A0.3Ohm-
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LAST SHIPMENTS (Last Updated: 3 days ago)-Surface Mount6-TSSOP, SC-88, SOT-363-6SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)6EAR99-Tin (Sn)Other Transistors270mWGULL WING260-775mA40NTJD2152P62DualENHANCEMENT MODE270mW-2 P-Channel (Dual)SWITCHING300m Ω @ 570mA, 4.5V1V @ 250μA225pF @ 8V-4nC @ 4.5V23ns--23 ns50 ns775mA-8V-8VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-40 pF-----RoHS CompliantLead FreeSurface Mount-8V-Not Qualified0.775A0.3Ohmunknown
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--Surface Mount6-TSSOP, SC-88, SOT-363-6SILICON-55°C~150°C TJTape & Reel (TR)2008e3-Obsolete1 (Unlimited)6EAR99-Tin (Sn)FET General Purpose Power270mWGULL WING260775mA40NTJD4401N62DualENHANCEMENT MODE270mW-2 N-Channel (Dual)SWITCHING375m Ω @ 630mA, 4.5V1.5V @ 250μA46pF @ 20V-3nC @ 4.5V227ns--227 ns786 ns630mA-12V20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-5 pF-----RoHS CompliantLead FreeSurface Mount20V-Not Qualified-0.375Ohm-
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