NTJD4105CT1G

ON Semiconductor NTJD4105CT1G

Part Number:
NTJD4105CT1G
Manufacturer:
ON Semiconductor
Ventron No:
2473843-NTJD4105CT1G
Description:
MOSFET N/P-CH 20V/8V SOT-363
ECAD Model:
Datasheet:
NTJD4105CT1G

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Specifications
ON Semiconductor NTJD4105CT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTJD4105CT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 20 hours ago)
  • Factory Lead Time
    19 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    220mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    270mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    630mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    NTJD4105C
  • Pin Count
    6
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    550mW
  • Turn On Delay Time
    83 ns
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    375m Ω @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    46pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    630mA 775mA
  • Gate Charge (Qg) (Max) @ Vgs
    3nC @ 4.5V
  • Rise Time
    23ns
  • Drain to Source Voltage (Vdss)
    20V 8V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Fall Time (Typ)
    36 ns
  • Turn-Off Delay Time
    50 ns
  • Continuous Drain Current (ID)
    775mA
  • Threshold Voltage
    920mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -8V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    920 mV
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTJD4105CT1G   Description
NTJD4105CT1G is a Small signal that you're operating our device at a limited range of voltage or current where the characteristic curve is linear . If you change the Quiencent point(Operating Point) to another area on the curve , then it may still be linear over the range of a small signal
NTJD4105CT1G         Features
? Complementary N and P Channel Device ? Leading ?8.0 V Trench for Low RDS(on) Performance ? ESD Protected Gate ? ESD Rating: Class 1 ? SC?88 Package for Small Footprint (2 x 2 mm) ? Pb?Free Packages are Available
NTJD4105CT1G        Applications
? DC?DC Conversion ? Load/Power Switching ? Single or Dual Cell Li?Ion Battery Supplied Devices ? Cell Phones, MP3s, Digital Cameras, PDAs  



NTJD4105CT1G More Descriptions
NTJD4105C: Small Signal MOSFET 20V 775mA 220 mOhm Dual Complementary SC-88/SC70-6/SOT-363
MOSFET N/P-CH 20V/8V SOT-363 / Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R
Small Signal Field-Effect Transistor, 0.63A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N/P Channel, 20V, 0.63A, Sot-363-6; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:8V; Continuous Drain Current Id N Channel:630Ma; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NTJD4105CT1G.
MOSFET, N & P CH, 20V, 0.63A, SOT-363-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 920mV; Power Dissipation Pd: 270mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
Product Comparison
The three parts on the right have similar specifications to NTJD4105CT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Voltage - Rated DC
    JESD-30 Code
    Qualification Status
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Reach Compliance Code
    View Compare
  • NTJD4105CT1G
    NTJD4105CT1G
    ACTIVE (Last Updated: 20 hours ago)
    19 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    220mOhm
    Tin (Sn)
    Other Transistors
    270mW
    GULL WING
    260
    630mA
    40
    NTJD4105C
    6
    2
    Dual
    ENHANCEMENT MODE
    550mW
    83 ns
    N and P-Channel
    SWITCHING
    375m Ω @ 630mA, 4.5V
    1.5V @ 250μA
    46pF @ 20V
    630mA 775mA
    3nC @ 4.5V
    23ns
    20V 8V
    N-CHANNEL AND P-CHANNEL
    36 ns
    50 ns
    775mA
    920mV
    8V
    -8V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    920 mV
    5 pF
    1mm
    2.2mm
    1.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • NTJD2152PT4G
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    Tin (Sn)
    Other Transistors
    270mW
    GULL WING
    260
    -775mA
    NOT SPECIFIED
    NTJD2152P
    6
    2
    Dual
    ENHANCEMENT MODE
    270mW
    -
    2 P-Channel (Dual)
    SWITCHING
    300m Ω @ 570mA, 4.5V
    1V @ 250μA
    225pF @ 8V
    -
    4nC @ 4.5V
    23ns
    -
    -
    23 ns
    50 ns
    775mA
    -
    8V
    -8V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    40 pF
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    Surface Mount
    -8V
    R-PDSO-G6
    Not Qualified
    0.775A
    0.3Ohm
    -
  • NTJD2152PT2G
    LAST SHIPMENTS (Last Updated: 3 days ago)
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    Tin (Sn)
    Other Transistors
    270mW
    GULL WING
    260
    -775mA
    40
    NTJD2152P
    6
    2
    Dual
    ENHANCEMENT MODE
    270mW
    -
    2 P-Channel (Dual)
    SWITCHING
    300m Ω @ 570mA, 4.5V
    1V @ 250μA
    225pF @ 8V
    -
    4nC @ 4.5V
    23ns
    -
    -
    23 ns
    50 ns
    775mA
    -
    8V
    -8V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    40 pF
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    Surface Mount
    -8V
    -
    Not Qualified
    0.775A
    0.3Ohm
    unknown
  • NTJD4401NT4G
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    270mW
    GULL WING
    260
    775mA
    40
    NTJD4401N
    6
    2
    Dual
    ENHANCEMENT MODE
    270mW
    -
    2 N-Channel (Dual)
    SWITCHING
    375m Ω @ 630mA, 4.5V
    1.5V @ 250μA
    46pF @ 20V
    -
    3nC @ 4.5V
    227ns
    -
    -
    227 ns
    786 ns
    630mA
    -
    12V
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    5 pF
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    Surface Mount
    20V
    -
    Not Qualified
    -
    0.375Ohm
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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