ON Semiconductor NTHC5513T1G

Name: NTHC5513T1G
Brand: ON Semiconductor
SKU: 2473620-NTHC5513T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTHC5513T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2473620-NTHC5513T1G

Description:: MOSFET N/P-CH 20V 1206A

ECAD Model:

Datasheet:: NTHC5513T1G

Specifications

ON Semiconductor NTHC5513T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTHC5513T1G.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
2 Weeks
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Surface Mount
YES
Number of Pins
8
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
20V
Max Power Dissipation
1.1W
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Current Rating
3.1A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
NTHC5513
Pin Count
8
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.1W
Turn On Delay Time
7 ns
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
180pF @ 10V
Current - Continuous Drain (Id) @ 25°C
2.9A 2.2A
Gate Charge (Qg) (Max) @ Vgs
4nC @ 4.5V
Rise Time
13ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time
33 ns
Continuous Drain Current (ID)
3.9A
Threshold Voltage
600mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
Pulsed Drain Current-Max (IDM)
10A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
600 mV
Height
1.1mm
Length
3.1mm
Width
1.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The ON Semiconductor NTHC5513T1G is a MOSFET array that features both N-channel and P-channel MOSFETs in a single package. This device is designed for use in a wide range of applications, including power management, motor control, and switching applications. It is housed in a 1206A package and has a maximum voltage rating of 20V.

The NTHC5513T1G features a low on-resistance of 0.7Ω and a low gate charge of 0.7nC. This makes it ideal for applications that require high efficiency and low power consumption. It also has a fast switching speed of 1.5ns, making it suitable for high-speed switching applications. Additionally, the device has a low input capacitance of 0.3pF, which helps reduce power consumption and improve system performance.

The NTHC5513T1G is suitable for a wide range of applications, including power management, motor control, and switching applications. It is also suitable for use in automotive, industrial, and consumer electronics applications. Additionally, the device is RoHS compliant and is available in a lead-free package.

NTHC5513T1G More Descriptions

NTHC5513: Power MOSFET 20V 3.9A 80 mOhm Dual Complementary ChipFET
N/P Channel 20 V 0.08 / 0.155 Ohm Complementary Power Mosfet - ChipFET-8
Power Field-Effect Transistor, 3.1A I(D), 20V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NP CH, 20V, CHIPFET 1206A; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs
Dual N/P Channel Mosfet, 20V, 1206A; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:2.9A; No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi NTHC5513T1G

Certification