ON Semiconductor NSS60601MZ4T1G
- Part Number:
- NSS60601MZ4T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463386-NSS60601MZ4T1G
- Description:
- TRANS NPN 60V 6A SOT-223
- ECAD Model:
-
- Datasheet:
- NSS60601MZ4T1G
ON Semiconductor NSS60601MZ4T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS60601MZ4T1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time11 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Base Part NumberNSS60601
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Power - Max800mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current6A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 600mA, 6A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency100MHz
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)6V
- hFE Min150
- Turn On Time-Max (ton)200ns
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSS60601MZ4T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 6A volts.
NSS60601MZ4T1G Features
the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 300mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NSS60601MZ4T1G Applications
There are a lot of ON Semiconductor
NSS60601MZ4T1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 6A volts.
NSS60601MZ4T1G Features
the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 300mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NSS60601MZ4T1G Applications
There are a lot of ON Semiconductor
NSS60601MZ4T1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NSS60601MZ4T1G More Descriptions
NSS Series 60 V 6 A Surface Mount Low Vce NPN Transistor - SOT-223
Trans GP BJT NPN 60V 6A Automotive 4-Pin(3 Tab) SOT-223 T/R
BIPOLAR TRANSISTOR, NPN, 60V, SOT-223, Transistor Polarity:NPN, Collector Emitter Voltage Max:60V,
Small Signal Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
TRANS, BIPOL, NPN, 60V, SOT223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 710mW; DC Collector Current: 6A; DC Current Gain hFE: 50hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Trans GP BJT NPN 60V 6A Automotive 4-Pin(3 Tab) SOT-223 T/R
BIPOLAR TRANSISTOR, NPN, 60V, SOT-223, Transistor Polarity:NPN, Collector Emitter Voltage Max:60V,
Small Signal Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
TRANS, BIPOL, NPN, 60V, SOT223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 710mW; DC Collector Current: 6A; DC Current Gain hFE: 50hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
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