Micron Technology Inc. NAND512W3A2SE06
- Part Number:
- NAND512W3A2SE06
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3730212-NAND512W3A2SE06
- Description:
- IC FLASH 512MBIT
- Datasheet:
- NAND512W3A2SE06
Micron Technology Inc. NAND512W3A2SE06 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND512W3A2SE06.
- Operating Temperature-40°C~85°C TA
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Max Operating Temperature85°C
- Min Operating Temperature-40°C
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- InterfaceParallel
- Memory Size512Mb 64M x 8
- Memory TypeNon-Volatile
- Access Time50ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Write Cycle Time - Word, Page50ns
- RoHS StatusROHS3 Compliant
NAND512W3A2SE06 Overview
As far as memory types are concerned, Non-Volatile is considered to be its memory type. In addition, memory ics is available in a Bulk case as well. A memory chip with a capacity of 512Mb 64M x 8 is used on this device. There is a mainstream memory format used by this device, which is called FLASH-format memory. This device has an extended operating temperature range of -40°C~85°C TA, so it's perfect for a wide range of demanding applications. It is capable of handling a voltage supply of 2.7V~3.6V. Temperatures below -40°C should not be used with this memory ics. It is recommended that operation of the part be restricted to temperatures not exceeding 85°C, otherwise damage to the part may occur as a result of overheating.
NAND512W3A2SE06 Features
The packaging for this particular product is classified as Bulk, indicating that it is not individually packaged but rather sold in larger quantities. However, the Part Status is listed as Obsolete, meaning that it is no longer being actively produced or sold. The Moisture Sensitivity Level (MSL) is rated as 3, indicating that it can withstand exposure to moisture for up to 168 hours. The Max Operating Temperature for this product is 85°C, while the Min Operating Temperature is -40°C, indicating its ability to function in a wide range of temperatures. The Voltage - Supply is listed as 2.7V~3.6V, and the Interface is Parallel. This product has a memory size of 512Mb 64M x 8, with an Access Time of 50ns. The Write Cycle Time, specifically for Word and Page, is also 50ns.
NAND512W3A2SE06 Applications
There are a lot of Micron Technology Inc.
NAND512W3A2SE06 Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
As far as memory types are concerned, Non-Volatile is considered to be its memory type. In addition, memory ics is available in a Bulk case as well. A memory chip with a capacity of 512Mb 64M x 8 is used on this device. There is a mainstream memory format used by this device, which is called FLASH-format memory. This device has an extended operating temperature range of -40°C~85°C TA, so it's perfect for a wide range of demanding applications. It is capable of handling a voltage supply of 2.7V~3.6V. Temperatures below -40°C should not be used with this memory ics. It is recommended that operation of the part be restricted to temperatures not exceeding 85°C, otherwise damage to the part may occur as a result of overheating.
NAND512W3A2SE06 Features
The packaging for this particular product is classified as Bulk, indicating that it is not individually packaged but rather sold in larger quantities. However, the Part Status is listed as Obsolete, meaning that it is no longer being actively produced or sold. The Moisture Sensitivity Level (MSL) is rated as 3, indicating that it can withstand exposure to moisture for up to 168 hours. The Max Operating Temperature for this product is 85°C, while the Min Operating Temperature is -40°C, indicating its ability to function in a wide range of temperatures. The Voltage - Supply is listed as 2.7V~3.6V, and the Interface is Parallel. This product has a memory size of 512Mb 64M x 8, with an Access Time of 50ns. The Write Cycle Time, specifically for Word and Page, is also 50ns.
NAND512W3A2SE06 Applications
There are a lot of Micron Technology Inc.
NAND512W3A2SE06 Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
NAND512W3A2SE06 More Descriptions
IC EEPROM 64K I2C 400KHZ 8DIP
IC FLASH 512M PARALLEL
IC FLASH 512M PARALLEL
The three parts on the right have similar specifications to NAND512W3A2SE06.
-
ImagePart NumberManufacturerOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyVoltage - SupplyInterfaceMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusMountMounting TypePackage / CaseNumber of PinsPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Nominal Supply CurrentOrganizationMemory WidthAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)Sync/AsyncWord SizeProgramming VoltageWrite Cycle Time-Max (tWC)Data PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyHeight Seated (Max)LengthRadiation HardeningREACH SVHCPbfree CodeQualification StatusOperating Supply VoltageView Compare
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NAND512W3A2SE06-40°C~85°C TABulkObsolete3 (168 Hours)85°C-40°CFLASH - NAND2.7V~3.6VParallel512Mb 64M x 8Non-Volatile50nsFLASHParallel50nsROHS3 Compliant-----------------------------------------------
-
-40°C~85°C TATrayObsolete3 (168 Hours)--FLASH - NAND2.7V~3.6V-1Gb 128M x 8Non-Volatile-FLASHParallel25nsROHS3 CompliantSurface MountSurface Mount48-TFSOP (0.724, 18.40mm Width)482008e3483A991.B.1.AMatte Tin (Sn)8542.32.00.51DUAL26013V0.5mm30NAND01G-A483.6V3/3.3V2.7V30mA128MX8828b1 Gb0.00005A25000 nsAsynchronous8b3V25msNONOYES1K128K2kBYES1.2mm18.4mmNoNo SVHC---
-
-40°C~85°C TATrayObsolete3 (168 Hours)--FLASH - NAND2.7V~3.6V-1Gb 128M x 8Non-Volatile-FLASHParallel30nsROHS3 CompliantSurface MountSurface Mount63-TFBGA632004e1633A991.B.1.ATIN SILVER COPPER8542.32.00.51BOTTOM26013V0.8mm30NAND01G-A633.6V3/3.3V2.7V30mA128MX8828b1 Gb0.00005A20 nsAsynchronous8b3V-NONOYES1K128K2KwordsYES1.05mm12mm--yesNot Qualified-
-
-40°C~85°C TATrayDiscontinued3 (168 Hours)--FLASH - NAND1.7V~1.95V-2Gb 256M x 8Non-Volatile-FLASHParallel45nsROHS3 CompliantSurface MountSurface Mount63-TFBGA632008e1633A991.B.1.ATIN SILVER COPPER8542.32.00.51BOTTOM26011.8V0.8mm30NAND02G631.95V-1.7V20mA256MX888b2 Gb0.00005A25000 nsAsynchronous8b--NONOYES2K128K2kBYES1.05mm11mmNo---1.8V
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