Micron Technology Inc. NAND01GW3B2BZA6E

NAND01GW3B2BZA6E Overview
The operating temperature of this electronic device ranges from -40°C to 85°C, making it suitable for use in a wide range of environments. It has been assigned the TA,JESD-609 code of e1, indicating that it meets the industry standards for reliability and performance. With a terminal pitch of 0.8mm, this device is designed to have a compact and efficient layout. It also has a single function, making it easy to use and integrate into various systems. The nominal supply current of 30mA ensures low power consumption, while the asynchronous sync/async feature allows for flexible operation. With a word size of 8b and sector size of 128K, this device is capable of handling large amounts of data. The ready/busy indicator is set to YES, providing users with a clear indication of its status. Additionally, the maximum seated height of 1.05mm ensures a secure and stable connection.

NAND01GW3B2BZA6E Features
Package / Case: 63-TFBGA
63 Pins


NAND01GW3B2BZA6E Applications
There are a lot of Micron Technology Inc.
NAND01GW3B2BZA6E Memory applications.


cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,