Micron Technology Inc. NAND01GW3B2CN6E

Name: NAND01GW3B2CN6E
Brand: Micron Technology Inc.
SKU: 3731167-NAND01GW3B2CN6E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NAND01GW3B2CN6E

Manufacturer:: Micron Technology Inc.

Ventron No:: 3731167-NAND01GW3B2CN6E

Description:: IC FLASH 1GBIT 30NS 48TSOP

ECAD Model:

Datasheet:: NAND01G-B2B, NAND02G-B2C

Specifications

Micron Technology Inc. NAND01GW3B2CN6E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND01GW3B2CN6E.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Number of Pins
48
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2008
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
ECCN Code
3A991.B.1.A
Terminal Finish
Matte Tin (Sn)
HTS Code
8542.32.00.51
Technology
FLASH - NAND
Voltage - Supply
2.7V~3.6V
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
0.5mm
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
NAND01G-A
Pin Count
48
Supply Voltage-Max (Vsup)
3.6V
Power Supplies
3/3.3V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
1Gb 128M x 8
Nominal Supply Current
30mA
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Interface
Parallel
Organization
128MX8
Memory Width
8
Write Cycle Time - Word, Page
25ns
Address Bus Width
28b
Density
1 Gb
Standby Current-Max
0.00005A
Access Time (Max)
25000 ns
Sync/Async
Asynchronous
Word Size
8b
Programming Voltage
3V
Write Cycle Time-Max (tWC)
25ms
Data Polling
NO
Toggle Bit
NO
Command User Interface
YES
Number of Sectors/Size
1K
Sector Size
128K
Page Size
2kB
Ready/Busy
YES
Height Seated (Max)
1.2mm
Length
18.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

NAND01GW3B2CN6E Overview
The product is a NAND flash memory chip with a 48-TFSOP (0.724, 18.40mm Width) package. It has a single function and the base part number is NAND01G-A. The power supplies required for operation are 3/3.3V and the nominal supply current is 30mA. The maximum standby current is 0.00005A. The access time is 25000 ns and the maximum write cycle time is 25ms. It does not support data polling. The maximum seated height is 1.2mm.

NAND01GW3B2CN6E Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
48 Pins

NAND01GW3B2CN6E Applications
There are a lot of Micron Technology Inc.
NAND01GW3B2CN6E Memory applications.

personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic

NAND01GW3B2CN6E More Descriptions

Flash Mem Parallel 3V/3.3V 1G-Bit 128M x 8 25us 48-Pin TSOP Tray
NAND FLASH 1Gbit,1.7^1.95V,3rd ver.,TSOP48,-40^85c
IC FLASH 1GBIT PARALLEL 48TSOP
FLASH, NAND, 1GBIT, TSOP48; Flash Memory Type: SLC NAND; Memory Size: 1Gbit; Flash Memory Configuration: 128K x 8bit; IC Interface Type: Parallel; Memory Case Style: TSOP; No. of Pins: 48Pins; Clock Frequency: -; Access Time: 25µs; Supply Voltage Min: 2.7V; Supply Voltage Max: 3.6V; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: 3V Parallel NAND Flash Memories; MSL: -; SVHC: No SVHC (17-Dec-2015); Memory Type: Flash; Operating Temperature Range: -40°C to 85°C; Supply Voltage Range: 2.7V to 3.6V

Certification