Micron Technology Inc. NAND512R3A2CZA6E

Name: NAND512R3A2CZA6E
Brand: Micron Technology Inc.
SKU: 3731120-NAND512R3A2CZA6E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NAND512R3A2CZA6E

Manufacturer:: Micron Technology Inc.

Ventron No:: 3731120-NAND512R3A2CZA6E

Description:: IC FLASH 512MBIT 63VFBGA

ECAD Model:

Datasheet:: NAND512-A2C

Specifications

Micron Technology Inc. NAND512R3A2CZA6E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND512R3A2CZA6E.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
63-TFBGA
Number of Pins
63
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
64
Technology
FLASH - NAND
Voltage - Supply
1.7V~1.95V
Terminal Position
BOTTOM
Supply Voltage
1.8V
Terminal Pitch
0.8mm
Base Part Number
NAND512-A
JESD-30 Code
R-PBGA-B64
Operating Supply Voltage
1.8V
Memory Size
512Mb 64M x 8
Nominal Supply Current
15mA
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Interface
Parallel
Organization
64MX8
Memory Width
8
Write Cycle Time - Word, Page
50ns
Address Bus Width
26b
Density
512 Mb
Standby Current-Max
0.00005A
Access Time (Max)
45 ns
Sync/Async
Asynchronous
Word Size
8b
Data Polling
NO
Toggle Bit
NO
Command User Interface
YES
Number of Sectors/Size
4K
Sector Size
16K
Page Size
512words
Ready/Busy
YES
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

NAND512R3A2CZA6E Overview
The surface mount product has 63 pins and can operate in temperatures ranging from -40°C to 85°C. It was published in 2009 and has 64 terminations. The organization of this product is 64MX8 and it has a write cycle time of 50ns for both word and page. The density of this product is 512 Mb and it can be used in both synchronous and asynchronous applications. However, it does not have radiation hardening capabilities.

NAND512R3A2CZA6E Features
Package / Case: 63-TFBGA
63 Pins
Operating Supply Voltage:1.8V

NAND512R3A2CZA6E Applications
There are a lot of Micron Technology Inc.
NAND512R3A2CZA6E Memory applications.

eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer

NAND512R3A2CZA6E More Descriptions

SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA Tray
R-PBGA-B64 Surface Mount NAND512-A Tray ic memory 45ns 0.8mm 15mA 512Mb
IC FLSH 512MBIT PARALLEL 63VFBGA

Product Comparison

The three parts on the right have similar specifications to NAND512R3A2CZA6E.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Voltage - Supply

Terminal Position

Supply Voltage

Terminal Pitch

Base Part Number

JESD-30 Code

Operating Supply Voltage

Memory Size

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Density

Standby Current-Max

Access Time (Max)

Sync/Async

Word Size

Data Polling

Toggle Bit

Command User Interface

Number of Sectors/Size

Sector Size

Page Size

Ready/Busy

Radiation Hardening

RoHS Status

JESD-609 Code

ECCN Code

Terminal Finish

HTS Code

Peak Reflow Temperature (Cel)

Number of Functions

Time@Peak Reflow Temperature-Max (s)

Pin Count

Supply Voltage-Max (Vsup)

Power Supplies

Supply Voltage-Min (Vsup)

Programming Voltage

Write Cycle Time-Max (tWC)

Height Seated (Max)

Length

REACH SVHC

Pbfree Code

Qualification Status

View Compare
NAND512R3A2CZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

2009

Obsolete

3 (168 Hours)

64

FLASH - NAND

1.7V~1.95V

BOTTOM

1.8V

0.8mm

NAND512-A

R-PBGA-B64

1.8V

512Mb 64M x 8

15mA

Non-Volatile

FLASH

Parallel

64MX8

8

50ns

26b

512 Mb

0.00005A

45 ns

Asynchronous

8b

NO

NO

YES

4K

16K

512words

YES

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NAND01GW3B2CN6E

Micron Technology Inc.

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48

-40°C~85°C TA

Tray

2008

Obsolete

3 (168 Hours)

48

FLASH - NAND

2.7V~3.6V

DUAL

3V

0.5mm

NAND01G-A

-

-

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

25ns

28b

1 Gb

0.00005A

25000 ns

Asynchronous

8b

NO

NO

YES

1K

128K

2kB

YES

No

ROHS3 Compliant

e3

3A991.B.1.A

Matte Tin (Sn)

8542.32.00.51

260

1

30

48

3.6V

3/3.3V

2.7V

3V

25ms

1.2mm

18.4mm

No SVHC

-

-

NAND512R3A2CZA6E vs NAND01GW3B2CN6E
NAND01GW3B2BZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

2004

Obsolete

3 (168 Hours)

63

FLASH - NAND

2.7V~3.6V

BOTTOM

3V

0.8mm

NAND01G-A

-

-

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

30ns

28b

1 Gb

0.00005A

20 ns

Asynchronous

8b

NO

NO

YES

1K

128K

2Kwords

YES

-

ROHS3 Compliant

e1

3A991.B.1.A

TIN SILVER COPPER

8542.32.00.51

260

1

30

63

3.6V

3/3.3V

2.7V

3V

-

1.05mm

12mm

-

yes

Not Qualified

NAND512R3A2CZA6E vs NAND01GW3B2BZA6E
NAND02GR3B2DZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

2008

Discontinued

3 (168 Hours)

63

FLASH - NAND

1.7V~1.95V

BOTTOM

1.8V

0.8mm

NAND02G

-

1.8V

2Gb 256M x 8

20mA

Non-Volatile

FLASH

Parallel

256MX8

8

45ns

8b

2 Gb

0.00005A

25000 ns

Asynchronous

8b

NO

NO

YES

2K

128K

2kB

YES

No

ROHS3 Compliant

e1

3A991.B.1.A

TIN SILVER COPPER

8542.32.00.51

260

1

30

63

1.95V

-

1.7V

-

-

1.05mm

11mm

-

-

-

NAND512R3A2CZA6E vs NAND02GR3B2DZA6E