Micron Technology Inc. MT47H64M16NF-25E IT:M
- Part Number:
- MT47H64M16NF-25E IT:M
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3233941-MT47H64M16NF-25E IT:M
- Description:
- IC SDRAM 1GBIT 400MHZ 84FBGA
- ECAD Model:
-
- Datasheet:
- MT47H64M16NF-25E IT:M
Micron Technology Inc. MT47H64M16NF-25E IT:M technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H64M16NF-25E IT:M.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case84-TFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C TC
- PackagingBulk
- Published2014
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations84
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.32
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)30
- Base Part NumberMT47H64M16
- Pin Count84
- JESD-30 CodeR-PBGA-B84
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.9V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size1Gb 64M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency400MHz
- Access Time400ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization64MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Memory Density1073741824 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- Height Seated (Max)1.2mm
- Length12.5mm
- Width8mm
- RoHS StatusROHS3 Compliant
MT47H64M16NF-25E IT:M Overview
This product is packaged in bulk and follows the JESD-609 code of e1. It also has the additional feature of AUTO/SELF REFRESH. Currently, it is not qualified for use. The memory size is 1Gb with a 64M x 16 configuration. The clock frequency for this product is 400MHz and it follows the DRAM memory format. The write cycle time for both word and page is 15ns. It also has an interleaved burst length of 48. This product is compliant with ROHS3 standards, ensuring its environmental sustainability. With these specifications, this product is suitable for a variety of applications and industries.
MT47H64M16NF-25E IT:M Features
Package / Case: 84-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT47H64M16NF-25E IT:M Applications
There are a lot of Micron Technology Inc. MT47H64M16NF-25E IT:M Memory applications.
supercomputers
multimedia computers
eSRAM
cell phones
embedded logic
main computer memory
printers
mainframes
eDRAM
networks
This product is packaged in bulk and follows the JESD-609 code of e1. It also has the additional feature of AUTO/SELF REFRESH. Currently, it is not qualified for use. The memory size is 1Gb with a 64M x 16 configuration. The clock frequency for this product is 400MHz and it follows the DRAM memory format. The write cycle time for both word and page is 15ns. It also has an interleaved burst length of 48. This product is compliant with ROHS3 standards, ensuring its environmental sustainability. With these specifications, this product is suitable for a variety of applications and industries.
MT47H64M16NF-25E IT:M Features
Package / Case: 84-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT47H64M16NF-25E IT:M Applications
There are a lot of Micron Technology Inc. MT47H64M16NF-25E IT:M Memory applications.
supercomputers
multimedia computers
eSRAM
cell phones
embedded logic
main computer memory
printers
mainframes
eDRAM
networks
MT47H64M16NF-25E IT:M More Descriptions
DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA
Active 3-STATE 2014 BOTTOM ic memory -40C~95C TC 1.7V 1073741824bit 8mm
DRAM, DDR2 SDRAM, 1Gb, x16, 84-ball FBGA, RoHSMicron SCT
DDR2 DRAM, 256MX4, 0.4ns, CMOS, PBGA84
DDR2 SDRAM 8 Meg x 16 x 8 banks 1368 MOQ/MPQ
DRAM, 64M X 16BIT, -40 TO 95DEG C;
CAP FILM 10000PF 20% 1.5KVDC RAD
Dram, 64M X 16Bit, -40 To 95Deg C; Dram Type:Ddr2; Memory Configuration:64M X 16Bit; Clock Frequency Max:400Mhz; Ic Case/Package:Tfbga; No. Of Pins:84Pins; Supply Voltage Nom:1.8V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron MT47H64M16NF-25E IT:M
Active 3-STATE 2014 BOTTOM ic memory -40C~95C TC 1.7V 1073741824bit 8mm
DRAM, DDR2 SDRAM, 1Gb, x16, 84-ball FBGA, RoHSMicron SCT
DDR2 DRAM, 256MX4, 0.4ns, CMOS, PBGA84
DDR2 SDRAM 8 Meg x 16 x 8 banks 1368 MOQ/MPQ
DRAM, 64M X 16BIT, -40 TO 95DEG C;
CAP FILM 10000PF 20% 1.5KVDC RAD
Dram, 64M X 16Bit, -40 To 95Deg C; Dram Type:Ddr2; Memory Configuration:64M X 16Bit; Clock Frequency Max:400Mhz; Ic Case/Package:Tfbga; No. Of Pins:84Pins; Supply Voltage Nom:1.8V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron MT47H64M16NF-25E IT:M
The three parts on the right have similar specifications to MT47H64M16NF-25E IT:M.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusNumber of PinsTime@Peak Reflow Temperature-Max (s)Operating Supply VoltageData Bus WidthAddress Bus WidthDensityMax FrequencyRadiation HardeningLead FreeView Compare
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MT47H64M16NF-25E IT:M13 WeeksSurface Mount84-TFBGAYES-40°C~95°C TCBulk2014e1yesActive3 (168 Hours)84EAR99Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)AUTO/SELF REFRESH8542.32.00.32SDRAM - DDR21.7V~1.9VBOTTOM26011.8V0.8mm30MT47H64M1684R-PBGA-B84Not Qualified1.9V1.8V1.7V1Gb 64M x 161VolatileSYNCHRONOUS400MHz400psDRAMParallel64MX163-STATE1615ns1073741824 bitCOMMON819248481.2mm12.5mm8mmROHS3 Compliant---------- -
-Surface Mount60-TFBGAYES0°C~85°C TCTray2012e1yesDiscontinued3 (168 Hours)60EAR99TIN SILVER COPPERAUTO/SELF REFRESH8542.32.00.36SDRAM - DDR21.7V~1.9VBOTTOM26011.8V0.8mm-MT47H512M460--1.9V-1.7V2Gb 512M x 41Volatile-533MHz350psDRAMParallel512MX43-STATE415ns-COMMON819248481.2mm11.5mm-ROHS3 Compliant60301.8V4b18b2 Gb1.066GHzNoLead Free
-
-Surface Mount60-FBGA-0°C~85°C TCTape & Reel (TR)2008--Obsolete3 (168 Hours)-----SDRAM - DDR21.7V~1.9V------MT47H64M8------512Mb 64M x 8-Volatile-400MHz400psDRAMParallel---15ns--------ROHS3 Compliant---------
-
-Surface Mount60-FBGA-0°C~85°C TCTape & Reel (TR)2005--Obsolete3 (168 Hours)-----SDRAM - DDR21.7V~1.9V------MT47H32M8B------256Mb 32M x 8-Volatile-333MHz450psDRAMParallel---15ns--------ROHS3 Compliant---------
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Surface Mount 84 Pin Memory IC MT47H64M16 1 Gb kb 12.5mm mm 160mA mA
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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