Micron Technology Inc. MT47H64M8B6-25E L:D TR

Name: MT47H64M8B6-25E L:D TR
Brand: Micron Technology Inc.
SKU: 7375016-MT47H64M8B6-25E L:D TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT47H64M8B6-25E L:D TR

Manufacturer:: Micron Technology Inc.

Ventron No:: 7375016-MT47H64M8B6-25E L:D TR

Description:: Memory IC MT47H64M8

ECAD Model:

Datasheet:: MT47H128M4,64M8,32M16

Specifications

Micron Technology Inc. MT47H64M8B6-25E L:D TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H64M8B6-25E L:D TR.

Mounting Type
Surface Mount
Package / Case
60-FBGA
Operating Temperature
0°C~85°C TC
Packaging
Tape & Reel (TR)
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
SDRAM - DDR2
Voltage - Supply
1.7V~1.9V
Base Part Number
MT47H64M8
Memory Size
512Mb 64M x 8
Memory Type
Volatile
Clock Frequency
400MHz
Access Time
400ps
Memory Format
DRAM
Memory Interface
Parallel
Write Cycle Time - Word, Page
15ns
RoHS Status
ROHS3 Compliant

Description

MT47H64M8B6-25E L:D TR Overview
Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 60-FBGA case contains it. The chip has an 512Mb 64M x 8 memory. This device uses a DRAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.7V~1.9V can be supplied to memory ics. Its recommended mounting type is Surface Mount. It is important to note that the memory has a clock frequency rotation within the range of 400MHz. Similar parts are frequently selected using MT47H64M8, the device's base part number.

MT47H64M8B6-25E L:D TR Features
Package / Case: 60-FBGA

MT47H64M8B6-25E L:D TR Applications
There are a lot of Micron Technology Inc.
MT47H64M8B6-25E L:D TR Memory applications.

cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,

MT47H64M8B6-25E L:D TR More Descriptions

IC EEPROM 8K SPI 3MHZ 8SOIC
IC DRAM 512M PARALLEL 60FBGA
IC DDR2 SDRAM 512MBIT 60BGA

Product Comparison

The three parts on the right have similar specifications to MT47H64M8B6-25E L:D TR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Base Part Number

Memory Size

Memory Type

Clock Frequency

Access Time

Memory Format

Memory Interface

Write Cycle Time - Word, Page

RoHS Status

Surface Mount

Number of Pins

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

Pin Count

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Number of Ports

Data Bus Width

Organization

Output Characteristics

Memory Width

Address Bus Width

Density

Max Frequency

I/O Type

Refresh Cycles

Sequential Burst Length

Interleaved Burst Length

Length

Height Seated (Max)

Radiation Hardening

Lead Free

Factory Lead Time

Series

View Compare
MT47H64M8B6-25E L:D TR

Micron Technology Inc.

Surface Mount

60-FBGA

0°C~85°C TC

Tape & Reel (TR)

2008

Obsolete

3 (168 Hours)

SDRAM - DDR2

1.7V~1.9V

MT47H64M8

512Mb 64M x 8

Volatile

400MHz

400ps

DRAM

Parallel

15ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT47H512M4EB-187E:C

Micron Technology Inc.

Surface Mount

60-TFBGA

0°C~85°C TC

Tray

2012

Discontinued

3 (168 Hours)

SDRAM - DDR2

1.7V~1.9V

MT47H512M4

2Gb 512M x 4

Volatile

533MHz

350ps

DRAM

Parallel

15ns

ROHS3 Compliant

YES

60

e1

yes

60

EAR99

TIN SILVER COPPER

AUTO/SELF REFRESH

8542.32.00.36

BOTTOM

260

1

1.8V

0.8mm

30

60

1.8V

1.9V

1.7V

1

4b

512MX4

3-STATE

4

18b

2 Gb

1.066GHz

COMMON

8192

48

48

11.5mm

1.2mm

No

Lead Free

-

-

MT47H64M8B6-25E L:D TR vs MT47H512M4EB-187E:C
MT47H64M16NF-25E IT:M TR

Micron Technology Inc.

Surface Mount

84-TFBGA

-40°C~85°C TA

Tape & Reel (TR)

-

Active

3 (168 Hours)

SDRAM - DDR2

1.7V~1.9V

-

1Gb 64M x 16

Volatile

400MHz

400ps

DRAM

Parallel

15ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

111 Weeks

Automotive, AEC-Q100

MT47H64M8B6-25E L:D TR vs MT47H64M16NF-25E IT:M TR
MT47H256M4SH-25E:M TR

Micron Technology Inc.

Surface Mount

60-TFBGA

0°C~85°C TC

Tape & Reel (TR)

-

Active

3 (168 Hours)

SDRAM - DDR2

1.7V~1.9V

-

1Gb 256M x 4

Volatile

400MHz

400ps

DRAM

Parallel

15ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

16 Weeks

-

MT47H64M8B6-25E L:D TR vs MT47H256M4SH-25E:M TR