Micron Technology Inc. MT47H512M4EB-187E:C
- Part Number:
- MT47H512M4EB-187E:C
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7375885-MT47H512M4EB-187E:C
- Description:
- 60 Pin Memory IC MT47H512M4 2 Gb kb 11.5mm mm
- Datasheet:
- MT47H512M4, 256M8, 128M16
Micron Technology Inc. MT47H512M4EB-187E:C technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H512M4EB-187E:C.
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Surface MountYES
- Number of Pins60
- Operating Temperature0°C~85°C TC
- PackagingTray
- Published2012
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.36
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT47H512M4
- Pin Count60
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.9V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size2Gb 512M x 4
- Number of Ports1
- Memory TypeVolatile
- Clock Frequency533MHz
- Access Time350ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width4b
- Organization512MX4
- Output Characteristics3-STATE
- Memory Width4
- Write Cycle Time - Word, Page15ns
- Address Bus Width18b
- Density2 Gb
- Max Frequency1.066GHz
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- Length11.5mm
- Height Seated (Max)1.2mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT47H512M4EB-187E:C Overview
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 60-TFBGA case. There is an 2Gb 512M x 4 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.7V~1.9V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 60 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.8V power supply. With a clock frequency of 533MHz, the memory rotates on its own. To select similar parts, many people use the device's base part number MT47H512M4. It is encased in an 60-pin package that contains this ic memory chip. It has 60 pins indicating it has 60 memory locations. It is noted that the operating supply voltage of this memory is 1.8V. While this memory chip features many merits, it also offers AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip. In addition to this device, there are COMMON-bit memory mapped I/O port addresses on this device. The memory runs at a maximum frequency of up to 1.066GHz cycles per second.
MT47H512M4EB-187E:C Features
Package / Case: 60-TFBGA
60 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT47H512M4EB-187E:C Applications
There are a lot of Micron Technology Inc.
MT47H512M4EB-187E:C Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 60-TFBGA case. There is an 2Gb 512M x 4 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.7V~1.9V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 60 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.8V power supply. With a clock frequency of 533MHz, the memory rotates on its own. To select similar parts, many people use the device's base part number MT47H512M4. It is encased in an 60-pin package that contains this ic memory chip. It has 60 pins indicating it has 60 memory locations. It is noted that the operating supply voltage of this memory is 1.8V. While this memory chip features many merits, it also offers AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip. In addition to this device, there are COMMON-bit memory mapped I/O port addresses on this device. The memory runs at a maximum frequency of up to 1.066GHz cycles per second.
MT47H512M4EB-187E:C Features
Package / Case: 60-TFBGA
60 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT47H512M4EB-187E:C Applications
There are a lot of Micron Technology Inc.
MT47H512M4EB-187E:C Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT47H512M4EB-187E:C More Descriptions
DRAM Chip DDR2 SDRAM 2G-Bit 512Mx4 1.8V 60-Pin FBGA Tray
512M X 4 DDR DRAM 0.35 ns PBGA60
IC SDRAM 2GBIT 533MHZ 60FBGA
IC DRAM 2G PARALLEL 60FBGA
IC DDR2 SDRAM 2GBIT 60BGA
Contact for details
512M X 4 DDR DRAM 0.35 ns PBGA60
IC SDRAM 2GBIT 533MHZ 60FBGA
IC DRAM 2G PARALLEL 60FBGA
IC DDR2 SDRAM 2GBIT 60BGA
Contact for details
The three parts on the right have similar specifications to MT47H512M4EB-187E:C.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityMax FrequencyI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)Radiation HardeningRoHS StatusLead FreeMountNominal Supply CurrentStandby Current-MaxFactory Lead TimeView Compare
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MT47H512M4EB-187E:CSurface Mount60-TFBGAYES600°C~85°C TCTray2012e1yesDiscontinued3 (168 Hours)60EAR99TIN SILVER COPPERAUTO/SELF REFRESH8542.32.00.36SDRAM - DDR21.7V~1.9VBOTTOM26011.8V0.8mm30MT47H512M4601.8V1.9V1.7V2Gb 512M x 41Volatile533MHz350psDRAMParallel4b512MX43-STATE415ns18b2 Gb1.066GHzCOMMON8192484811.5mm1.2mmNoROHS3 CompliantLead Free-----
-
Surface Mount84-TFBGA-840°C~85°C TCTray2011e1yesObsolete3 (168 Hours)84EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.32SDRAM - DDR21.7V~1.9VBOTTOM26011.8V0.8mm30MT47H64M16841.8V1.9V1.7V1Gb 64M x 161Volatile400MHz400psDRAMParallel16b64MX163-STATE1615ns16b1 Gb800MHzCOMMON8192484812.5mm1.2mmNoROHS3 CompliantLead FreeSurface Mount160mA0.007A-
-
Surface Mount60-TFBGA---40°C~95°C TCTape & Reel (TR)---Active3 (168 Hours)-----SDRAM - DDR21.7V~1.9V-----------512M 64M x 8-Volatile400MHz400psDRAMParallel----15ns----------ROHS3 Compliant-----
-
Surface Mount60-TFBGA--0°C~85°C TCTape & Reel (TR)---Active3 (168 Hours)-----SDRAM - DDR21.7V~1.9V-----------1Gb 256M x 4-Volatile400MHz400psDRAMParallel----15ns----------ROHS3 Compliant----16 Weeks
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