MT47H512M4EB-187E:C

Micron Technology Inc. MT47H512M4EB-187E:C

Part Number:
MT47H512M4EB-187E:C
Manufacturer:
Micron Technology Inc.
Ventron No:
7375885-MT47H512M4EB-187E:C
Description:
60 Pin Memory IC MT47H512M4 2 Gb kb 11.5mm mm
ECAD Model:
Datasheet:
MT47H512M4, 256M8, 128M16

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Specifications
Micron Technology Inc. MT47H512M4EB-187E:C technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H512M4EB-187E:C.
  • Mounting Type
    Surface Mount
  • Package / Case
    60-TFBGA
  • Surface Mount
    YES
  • Number of Pins
    60
  • Operating Temperature
    0°C~85°C TC
  • Packaging
    Tray
  • Published
    2012
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    60
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    AUTO/SELF REFRESH
  • HTS Code
    8542.32.00.36
  • Technology
    SDRAM - DDR2
  • Voltage - Supply
    1.7V~1.9V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.8mm
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MT47H512M4
  • Pin Count
    60
  • Operating Supply Voltage
    1.8V
  • Supply Voltage-Max (Vsup)
    1.9V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    2Gb 512M x 4
  • Number of Ports
    1
  • Memory Type
    Volatile
  • Clock Frequency
    533MHz
  • Access Time
    350ps
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Data Bus Width
    4b
  • Organization
    512MX4
  • Output Characteristics
    3-STATE
  • Memory Width
    4
  • Write Cycle Time - Word, Page
    15ns
  • Address Bus Width
    18b
  • Density
    2 Gb
  • Max Frequency
    1.066GHz
  • I/O Type
    COMMON
  • Refresh Cycles
    8192
  • Sequential Burst Length
    48
  • Interleaved Burst Length
    48
  • Length
    11.5mm
  • Height Seated (Max)
    1.2mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MT47H512M4EB-187E:C Overview
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 60-TFBGA case. There is an 2Gb 512M x 4 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.7V~1.9V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 60 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.8V power supply. With a clock frequency of 533MHz, the memory rotates on its own. To select similar parts, many people use the device's base part number MT47H512M4. It is encased in an 60-pin package that contains this ic memory chip. It has 60 pins indicating it has 60 memory locations. It is noted that the operating supply voltage of this memory is 1.8V. While this memory chip features many merits, it also offers AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip. In addition to this device, there are COMMON-bit memory mapped I/O port addresses on this device. The memory runs at a maximum frequency of up to 1.066GHz cycles per second.

MT47H512M4EB-187E:C Features
Package / Case: 60-TFBGA
60 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON


MT47H512M4EB-187E:C Applications
There are a lot of Micron Technology Inc.
MT47H512M4EB-187E:C Memory applications.


telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT47H512M4EB-187E:C More Descriptions
DRAM Chip DDR2 SDRAM 2G-Bit 512Mx4 1.8V 60-Pin FBGA Tray
512M X 4 DDR DRAM 0.35 ns PBGA60
IC SDRAM 2GBIT 533MHZ 60FBGA
IC DRAM 2G PARALLEL 60FBGA
IC DDR2 SDRAM 2GBIT 60BGA
Contact for details
Product Comparison
The three parts on the right have similar specifications to MT47H512M4EB-187E:C.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Memory Type
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Output Characteristics
    Memory Width
    Write Cycle Time - Word, Page
    Address Bus Width
    Density
    Max Frequency
    I/O Type
    Refresh Cycles
    Sequential Burst Length
    Interleaved Burst Length
    Length
    Height Seated (Max)
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Nominal Supply Current
    Standby Current-Max
    Factory Lead Time
    View Compare
  • MT47H512M4EB-187E:C
    MT47H512M4EB-187E:C
    Surface Mount
    60-TFBGA
    YES
    60
    0°C~85°C TC
    Tray
    2012
    e1
    yes
    Discontinued
    3 (168 Hours)
    60
    EAR99
    TIN SILVER COPPER
    AUTO/SELF REFRESH
    8542.32.00.36
    SDRAM - DDR2
    1.7V~1.9V
    BOTTOM
    260
    1
    1.8V
    0.8mm
    30
    MT47H512M4
    60
    1.8V
    1.9V
    1.7V
    2Gb 512M x 4
    1
    Volatile
    533MHz
    350ps
    DRAM
    Parallel
    4b
    512MX4
    3-STATE
    4
    15ns
    18b
    2 Gb
    1.066GHz
    COMMON
    8192
    48
    48
    11.5mm
    1.2mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • MT47H64M16HR-25E:H
    Surface Mount
    84-TFBGA
    -
    84
    0°C~85°C TC
    Tray
    2011
    e1
    yes
    Obsolete
    3 (168 Hours)
    84
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AUTO/SELF REFRESH
    8542.32.00.32
    SDRAM - DDR2
    1.7V~1.9V
    BOTTOM
    260
    1
    1.8V
    0.8mm
    30
    MT47H64M16
    84
    1.8V
    1.9V
    1.7V
    1Gb 64M x 16
    1
    Volatile
    400MHz
    400ps
    DRAM
    Parallel
    16b
    64MX16
    3-STATE
    16
    15ns
    16b
    1 Gb
    800MHz
    COMMON
    8192
    48
    48
    12.5mm
    1.2mm
    No
    ROHS3 Compliant
    Lead Free
    Surface Mount
    160mA
    0.007A
    -
  • MT47H64M8SH-25E IT:H TR
    Surface Mount
    60-TFBGA
    -
    -
    -40°C~95°C TC
    Tape & Reel (TR)
    -
    -
    -
    Active
    3 (168 Hours)
    -
    -
    -
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    512M 64M x 8
    -
    Volatile
    400MHz
    400ps
    DRAM
    Parallel
    -
    -
    -
    -
    15ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • MT47H256M4SH-25E:M TR
    Surface Mount
    60-TFBGA
    -
    -
    0°C~85°C TC
    Tape & Reel (TR)
    -
    -
    -
    Active
    3 (168 Hours)
    -
    -
    -
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1Gb 256M x 4
    -
    Volatile
    400MHz
    400ps
    DRAM
    Parallel
    -
    -
    -
    -
    15ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    16 Weeks
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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