Micron Technology Inc. MT47H128M8SH-25E IT:M TR

Name: MT47H128M8SH-25E IT:M TR
Brand: Micron Technology Inc.
SKU: 7373440-MT47H128M8SH-25E IT:M TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT47H128M8SH-25E IT:M TR

Manufacturer:: Micron Technology Inc.

Ventron No:: 7373440-MT47H128M8SH-25E IT:M TR

Description:: Memory IC

ECAD Model:

Datasheet:: MT47H128M8SH-25E IT:M TR

Specifications

Micron Technology Inc. MT47H128M8SH-25E IT:M TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H128M8SH-25E IT:M TR.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
60-TFBGA
Operating Temperature
-40°C~95°C TC
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
SDRAM - DDR2
Voltage - Supply
1.7V~1.9V
Memory Size
1Gb 128M x 8
Memory Type
Volatile
Clock Frequency
400MHz
Access Time
400ps
Memory Format
DRAM
Memory Interface
Parallel
Write Cycle Time - Word, Page
15ns
RoHS Status
ROHS3 Compliant

Description

MT47H128M8SH-25E IT:M TR Overview
Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 60-TFBGA case contains it. The chip has an 1Gb 128M x 8 memory. This device uses a DRAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.7V~1.9V can be supplied to memory ics. Its recommended mounting type is Surface Mount. It is important to note that the memory has a clock frequency rotation within the range of 400MHz.

MT47H128M8SH-25E IT:M TR Features
Package / Case: 60-TFBGA

MT47H128M8SH-25E IT:M TR Applications
There are a lot of Micron Technology Inc.
MT47H128M8SH-25E IT:M TR Memory applications.

cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,

MT47H128M8SH-25E IT:M TR More Descriptions

DRAM Chip DDR2 SDRAM 1G-Bit 128M x 8 1.8V 60-Pin FBGA T/R
DDR2 DRAM, 256MX4, 0.4ns, CMOS, PBGA84
IC DRAM 1GBIT PARALLEL 60FBGA
IC DRAM 1G PARALLEL 96FBGA
IC SDRAM DDR2 1G 60FBGA

Product Comparison

The three parts on the right have similar specifications to MT47H128M8SH-25E IT:M TR.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Memory Size

Memory Type

Clock Frequency

Access Time

Memory Format

Memory Interface

Write Cycle Time - Word, Page

RoHS Status

Surface Mount

Number of Pins

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Number of Ports

Data Bus Width

Organization

Output Characteristics

Memory Width

Address Bus Width

Density

Max Frequency

I/O Type

Refresh Cycles

Sequential Burst Length

Interleaved Burst Length

Length

Height Seated (Max)

Radiation Hardening

Lead Free

View Compare
MT47H128M8SH-25E IT:M TR

Micron Technology Inc.

12 Weeks

Surface Mount

60-TFBGA

-40°C~95°C TC

Tape & Reel (TR)

Active

3 (168 Hours)

SDRAM - DDR2

1.7V~1.9V

1Gb 128M x 8

Volatile

400MHz

400ps

DRAM

Parallel

15ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT47H512M4EB-187E:C

Micron Technology Inc.

-

Surface Mount

60-TFBGA

0°C~85°C TC

Tray

Discontinued

3 (168 Hours)

SDRAM - DDR2

1.7V~1.9V

2Gb 512M x 4

Volatile

533MHz

350ps

DRAM

Parallel

15ns

ROHS3 Compliant

YES

60

2012

e1

yes

60

EAR99

TIN SILVER COPPER

AUTO/SELF REFRESH

8542.32.00.36

BOTTOM

260

1

1.8V

0.8mm

30

MT47H512M4

60

1.8V

1.9V

1.7V

1

4b

512MX4

3-STATE

4

18b

2 Gb

1.066GHz

COMMON

8192

48

48

11.5mm

1.2mm

No

Lead Free

MT47H128M8SH-25E IT:M TR vs MT47H512M4EB-187E:C
MT47H64M8B6-25E L:D TR

Micron Technology Inc.

-

Surface Mount

60-FBGA

0°C~85°C TC

Tape & Reel (TR)

Obsolete

3 (168 Hours)

SDRAM - DDR2

1.7V~1.9V

512Mb 64M x 8

Volatile

400MHz

400ps

DRAM

Parallel

15ns

ROHS3 Compliant

-

-

2008

-

-

-

-

-

-

-

-

-

-

-

-

-

MT47H64M8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT47H128M8SH-25E IT:M TR vs MT47H64M8B6-25E L:D TR
MT47H256M4SH-25E:M TR

Micron Technology Inc.

16 Weeks

Surface Mount

60-TFBGA

0°C~85°C TC

Tape & Reel (TR)

Active

3 (168 Hours)

SDRAM - DDR2

1.7V~1.9V

1Gb 256M x 4

Volatile

400MHz

400ps

DRAM

Parallel

15ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT47H128M8SH-25E IT:M TR vs MT47H256M4SH-25E:M TR