ON Semiconductor MSB92AWT1G
- Part Number:
- MSB92AWT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585317-MSB92AWT1G
- Description:
- TRANS PNP 300V 0.5A SOT-323
- Datasheet:
- MSB92AWT1G
ON Semiconductor MSB92AWT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MSB92AWT1G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMSB92W
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 10V
- Current - Collector Cutoff (Max)250nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-500mV
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MSB92AWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MSB92AWT1G Features
the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MSB92AWT1G Applications
There are a lot of ON Semiconductor
MSB92AWT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MSB92AWT1G Features
the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MSB92AWT1G Applications
There are a lot of ON Semiconductor
MSB92AWT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MSB92AWT1G More Descriptions
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 120 @ 1mA 10V 250nA ICBO 150mW 50MHz
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 300V 0.5A 150mW Automotive 3-Pin SC-70 T/R
High Voltage PNP Bipolar Transistor
MSB92AWT1G Series 300V500 mA PNP Silicon General Purpose High Voltage Transistor
This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Bipolar Transistor, Pnp, -300V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:300V; Continuous Collector Current:500Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MSB92AWT1G
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 300V 0.5A 150mW Automotive 3-Pin SC-70 T/R
High Voltage PNP Bipolar Transistor
MSB92AWT1G Series 300V500 mA PNP Silicon General Purpose High Voltage Transistor
This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Bipolar Transistor, Pnp, -300V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:300V; Continuous Collector Current:500Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MSB92AWT1G
The three parts on the right have similar specifications to MSB92AWT1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeReach Compliance CodeJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMax Breakdown VoltageView Compare
-
MSB92AWT1GACTIVE (Last Updated: 6 days ago)2 WeeksSurface MountSC-70, SOT-323YES3SILICON150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-300V150mWDUALGULL WING260-500mA50MHz40MSB92W31Single150mWAMPLIFIER50MHzPNPPNP300V500mA120 @ 1mA 10V250nA ICBO500mV @ 2mA, 20mA300V50MHz-500mV300V5V120NoROHS3 CompliantLead Free----------
-
--Surface MountSC-70, SOT-323YES-SILICON150°C TJTape & Reel (TR)-e0noObsolete1 (Unlimited)3-TIN LEAD---DUALGULL WING240--30-31--AMPLIFIER-PNPPNP--120 @ 1mA 10V250nA ICBO500mV @ 2mA, 20mA-50MHz-----Non-RoHS Compliant-unknownR-PDSO-G3COMMERCIALSINGLE150mW300V500mA50MHz-
-
-13 WeeksSurface MountSC-70, SOT-323YES3SILICON150°C TJTape & Reel (TR)2010e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-150mWDUALGULL WING--50MHz-MSB92W31Single150mWAMPLIFIER50MHzPNPPNP300V500mA120 @ 1mA 10V250nA ICBO500mV @ 2mA, 20mA300V50MHz-300V-5V25NoROHS3 Compliant----------
-
ACTIVE (Last Updated: 1 day ago)2 WeeksSurface MountSC-70, SOT-323YES3SILICON150°C TJTape & Reel (TR)2010e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-300V150mWDUALGULL WING260-500mA50MHz40MSB92W31Single150mWAMPLIFIER50MHzPNPPNP300V500mA120 @ 1mA 10V250nA ICBO500mV @ 2mA, 20mA300V50MHz-500mV300V5V25NoROHS3 CompliantLead Free--------300V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 December 2023
LM358DR Dual Operational Amplifier Characteristics, Applications, LM358DR vs LM358S
Ⅰ. LM358DR descriptionⅡ. Pin configuration of LM358DRⅢ. What are the characteristics of LM358DR?Ⅳ. How to adjust the gain setting of the LM358DR chip?Ⅴ. Schematic diagram of LM358DRⅥ. What... -
26 December 2023
An Overview of BAV99 Switching Diode
Ⅰ. What is a switching diode?Ⅱ. Introduction of BAV99Ⅲ. What are the functions of BAV99 diode?Ⅳ. Typical characteristics of BAV99 diodeⅤ. Technical parameters of BAV99 diodeⅥ. How to... -
27 December 2023
Everything You Need to Know About STM8S003F3P6TR Microcontroller
Ⅰ. Overview of STM8S003F3P6TRⅡ. Structure of STM8S003F3P6TR microcontrollerⅢ. Package of STM8S003F3P6TR microcontrollerⅣ. STM8S003F3P6TR priceⅤ. Advantages and application scenarios of STM8S003F3P6TRⅥ. STM8S003F3P6TR specificationsⅦ. What are the characteristics of STM8S003F3P6TR... -
27 December 2023
Applications and Usage of IR2011STRPBF Isolated Gate Driver
Ⅰ. What is a gate driver?Ⅱ. Introduction to IR2011STRPBFⅢ. Dimensions and package of IR2011STRPBFⅣ. Technical parameters of IR2011STRPBFⅤ. Who produces the IR2011STRPBF?Ⅵ. Absolute maximum ratings of IR2011STRPBFⅦ. Where...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.