MSB92AWT1G

ON Semiconductor MSB92AWT1G

Part Number:
MSB92AWT1G
Manufacturer:
ON Semiconductor
Ventron No:
3585317-MSB92AWT1G
Description:
TRANS PNP 300V 0.5A SOT-323
ECAD Model:
Datasheet:
MSB92AWT1G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor MSB92AWT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MSB92AWT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -300V
  • Max Power Dissipation
    150mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -500mA
  • Frequency
    50MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MSB92W
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    150mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    300V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA 10V
  • Current - Collector Cutoff (Max)
    250nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 2mA, 20mA
  • Collector Emitter Breakdown Voltage
    300V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    -500mV
  • Collector Base Voltage (VCBO)
    300V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    120
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MSB92AWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.

MSB92AWT1G Features
the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz


MSB92AWT1G Applications
There are a lot of ON Semiconductor
MSB92AWT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MSB92AWT1G More Descriptions
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 120 @ 1mA 10V 250nA ICBO 150mW 50MHz
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 300V 0.5A 150mW Automotive 3-Pin SC-70 T/R
High Voltage PNP Bipolar Transistor
MSB92AWT1G Series 300V500 mA PNP Silicon General Purpose High Voltage Transistor
This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Bipolar Transistor, Pnp, -300V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:300V; Continuous Collector Current:500Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MSB92AWT1G
Product Comparison
The three parts on the right have similar specifications to MSB92AWT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Radiation Hardening
    RoHS Status
    Lead Free
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Max Breakdown Voltage
    View Compare
  • MSB92AWT1G
    MSB92AWT1G
    ACTIVE (Last Updated: 6 days ago)
    2 Weeks
    Surface Mount
    SC-70, SOT-323
    YES
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -300V
    150mW
    DUAL
    GULL WING
    260
    -500mA
    50MHz
    40
    MSB92W
    3
    1
    Single
    150mW
    AMPLIFIER
    50MHz
    PNP
    PNP
    300V
    500mA
    120 @ 1mA 10V
    250nA ICBO
    500mV @ 2mA, 20mA
    300V
    50MHz
    -500mV
    300V
    5V
    120
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MSB92WT1
    -
    -
    Surface Mount
    SC-70, SOT-323
    YES
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    -
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    -
    TIN LEAD
    -
    -
    -
    DUAL
    GULL WING
    240
    -
    -
    30
    -
    3
    1
    -
    -
    AMPLIFIER
    -
    PNP
    PNP
    -
    -
    120 @ 1mA 10V
    250nA ICBO
    500mV @ 2mA, 20mA
    -
    50MHz
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    unknown
    R-PDSO-G3
    COMMERCIAL
    SINGLE
    150mW
    300V
    500mA
    50MHz
    -
  • MSB92AS1WT1G
    -
    13 Weeks
    Surface Mount
    SC-70, SOT-323
    YES
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2010
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -
    150mW
    DUAL
    GULL WING
    -
    -
    50MHz
    -
    MSB92W
    3
    1
    Single
    150mW
    AMPLIFIER
    50MHz
    PNP
    PNP
    300V
    500mA
    120 @ 1mA 10V
    250nA ICBO
    500mV @ 2mA, 20mA
    300V
    50MHz
    -
    300V
    -5V
    25
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MSB92WT1G
    ACTIVE (Last Updated: 1 day ago)
    2 Weeks
    Surface Mount
    SC-70, SOT-323
    YES
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2010
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -300V
    150mW
    DUAL
    GULL WING
    260
    -500mA
    50MHz
    40
    MSB92W
    3
    1
    Single
    150mW
    AMPLIFIER
    50MHz
    PNP
    PNP
    300V
    500mA
    120 @ 1mA 10V
    250nA ICBO
    500mV @ 2mA, 20mA
    300V
    50MHz
    -500mV
    300V
    5V
    25
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    300V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 26 December 2023

    LM358DR Dual Operational Amplifier Characteristics, Applications, LM358DR vs LM358S

    Ⅰ. LM358DR descriptionⅡ. Pin configuration of LM358DRⅢ. What are the characteristics of LM358DR?Ⅳ. How to adjust the gain setting of the LM358DR chip?Ⅴ. Schematic diagram of LM358DRⅥ. What...
  • 26 December 2023

    An Overview of BAV99 Switching Diode

    Ⅰ. What is a switching diode?Ⅱ. Introduction of BAV99Ⅲ. What are the functions of BAV99 diode?Ⅳ. Typical characteristics of BAV99 diodeⅤ. Technical parameters of BAV99 diodeⅥ. How to...
  • 27 December 2023

    Everything You Need to Know About STM8S003F3P6TR Microcontroller

    Ⅰ. Overview of STM8S003F3P6TRⅡ. Structure of STM8S003F3P6TR microcontrollerⅢ. Package of STM8S003F3P6TR microcontrollerⅣ. STM8S003F3P6TR priceⅤ. Advantages and application scenarios of STM8S003F3P6TRⅥ. STM8S003F3P6TR specificationsⅦ. What are the characteristics of STM8S003F3P6TR...
  • 27 December 2023

    Applications and Usage of IR2011STRPBF Isolated Gate Driver

    Ⅰ. What is a gate driver?Ⅱ. Introduction to IR2011STRPBFⅢ. Dimensions and package of IR2011STRPBFⅣ. Technical parameters of IR2011STRPBFⅤ. Who produces the IR2011STRPBF?Ⅵ. Absolute maximum ratings of IR2011STRPBFⅦ. Where...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.