ON Semiconductor MSB1218A-RT1

MSB1218A-RT1 Overview
In this device, the DC current gain is 210 @ 2mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 100mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

MSB1218A-RT1 Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -100mA
a transition frequency of 100MHz


MSB1218A-RT1 Applications
There are a lot of ON Semiconductor
MSB1218A-RT1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting