NXP USA Inc. MRFE6VP5600HSR5
- Part Number:
- MRFE6VP5600HSR5
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3554067-MRFE6VP5600HSR5
- Description:
- FET RF 2CH 130V 230MHZ NI1230S
- ECAD Model:
-
- Datasheet:
- MRFE6VP5600HSR5
NXP USA Inc. MRFE6VP5600HSR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRFE6VP5600HSR5.
- Factory Lead Time10 Weeks
- Package / CaseNI-1230-4S
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated130V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency230MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRFE6VP5600
- JESD-30 CodeR-CDFP-F4
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements2
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test100mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS (Dual)
- Gain25dB
- DS Breakdown Voltage-Min130V
- Power - Output600W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)1670W
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MRFE6VP5600HSR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRFE6VP5600HSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRFE6VP5600HSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRFE6VP5600HSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRFE6VP5600HSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRFE6VP5600HSR5 More Descriptions
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1829
Trans RF MOSFET N-CH 130V 5-Pin Case 375E-04 T/R
RF MOSFET Transistors VHV6 600W 50V NI1230HS
IC REG LINEAR 2.5V 150MA 5TSOP
FET RF 2CH 130V 230MHZ NI1230S
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1829
Trans RF MOSFET N-CH 130V 5-Pin Case 375E-04 T/R
RF MOSFET Transistors VHV6 600W 50V NI1230HS
IC REG LINEAR 2.5V 150MA 5TSOP
FET RF 2CH 130V 230MHZ NI1230S
The three parts on the right have similar specifications to MRFE6VP5600HSR5.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - RatedHTS CodeSubcategoryTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyPower Dissipation-Max (Abs)Voltage - TestRoHS StatusSupplier Device PackageView Compare
-
MRFE6VP5600HSR510 WeeksNI-1230-4SYESSILICONTape & Reel (TR)2006ActiveNot Applicable4EAR99130V8541.29.00.75FET General Purpose PowerFLAT260230MHz40MRFE6VP5600R-CDFP-F4Not Qualified225°C2COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODESOURCE100mAAMPLIFIERN-CHANNELLDMOS (Dual)25dB130V600WMETAL-OXIDE SEMICONDUCTOR1670W50VROHS3 Compliant-- -
-SOT-957A--Tape & Reel (TR)2009Obsolete1 (Unlimited)--66V----880MHz-MRFE6S9160-------1.2A--LDMOS21dB-35W--28VROHS3 CompliantNI-780H-2L
-
-NI-880S--Tape & Reel (TR)2008Obsolete1 (Unlimited)--66V---NOT SPECIFIED880MHzNOT SPECIFIEDMRFE6S9200-------1.4A--LDMOS21dB-58W--28VROHS3 Compliant-
-
-NI-780S-4--Tape & Reel (TR)2011Discontinued3 (168 Hours)-EAR99130V8541.29.00.75---230MHz-MRFE6VP6300-------100mA--LDMOS (Dual)26.5dB-300W--50VROHS3 Compliant-
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