NXP USA Inc. MRFE6P3300HR3
- Part Number:
- MRFE6P3300HR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477491-MRFE6P3300HR3
- Description:
- FET RF 66V 863MHZ NI-860C3
- ECAD Model:
-
- Datasheet:
- MRFE6P3300HR3/HR5
NXP USA Inc. MRFE6P3300HR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRFE6P3300HR3.
- Factory Lead Time10 Weeks
- Package / CaseNI-860C3
- PackagingTape & Reel (TR)
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Voltage - Rated66V
- HTS Code8541.29.00.75
- Frequency857MHz~863MHz
- Current - Test1.6A
- Transistor TypeLDMOS
- Gain20.4dB
- Power - Output270W
- Voltage - Test32V
- RoHS StatusROHS3 Compliant
MRFE6P3300HR3 Description
Designed for 470 to 860 MHz wideband industrial and commercial applications. This device is perfect for large-signal, common-source amplifier applications in 32 volt analog or digital television transmitter equipment due to its high gain and broadband performance.
MRFE6P3300HR3 Features
? series equivalent large-signal impedance parameters
? Internally Matching for User-Friendliness
? Intended for Push-Pull Only Operation
? Up to a Maximum of 32 VDD Operation Qualified
? Protection from Integrated ESD
? RoHS conformant
MRFE6P3300HR3 Applications
Switching applications
Designed for 470 to 860 MHz wideband industrial and commercial applications. This device is perfect for large-signal, common-source amplifier applications in 32 volt analog or digital television transmitter equipment due to its high gain and broadband performance.
MRFE6P3300HR3 Features
? series equivalent large-signal impedance parameters
? Internally Matching for User-Friendliness
? Intended for Push-Pull Only Operation
? Up to a Maximum of 32 VDD Operation Qualified
? Protection from Integrated ESD
? RoHS conformant
MRFE6P3300HR3 Applications
Switching applications
MRFE6P3300HR3 More Descriptions
Lateral N-Channel Rf Power Mosfet, 860 Mhz, 300 W, 32 V Rohs Compliant: Yes
RF Power Transistor,470 to 860 MHz, 300 W, Typ Gain in dB is 20.4 @ 860 MHz, 32 V, LDMOS, SOT1856
Transistor RF MOSFET N-Channel 66V 5-Pin NI-860C3
RF MOSFET Transistors HV6 900MHZ 300W NI860ML
RF 2-ELEMENT, ULTRA HIGH FREQUEN
IC REG LINEAR 1.5V 80MA SC82AB
RF Power Transistor,470 to 860 MHz, 300 W, Typ Gain in dB is 20.4 @ 860 MHz, 32 V, LDMOS, SOT1856
Transistor RF MOSFET N-Channel 66V 5-Pin NI-860C3
RF MOSFET Transistors HV6 900MHZ 300W NI860ML
RF 2-ELEMENT, ULTRA HIGH FREQUEN
IC REG LINEAR 1.5V 80MA SC82AB
The three parts on the right have similar specifications to MRFE6P3300HR3.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodeFrequencyCurrent - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusSupplier Device PackageBase Part NumberPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
-
MRFE6P3300HR310 WeeksNI-860C3Tape & Reel (TR)2008Obsolete1 (Unlimited)EAR9966V8541.29.00.75857MHz~863MHz1.6ALDMOS20.4dB270W32VROHS3 Compliant----- -
-NI-880Tape & Reel (TR)2008Obsolete1 (Unlimited)-66V-880MHz1.4ALDMOS21dB58W28VROHS3 CompliantNI-880MRFE6S9200--
-
-NI-880STape & Reel (TR)2008Obsolete1 (Unlimited)-66V-880MHz1.4ALDMOS21dB58W28VROHS3 Compliant-MRFE6S9200NOT SPECIFIEDNOT SPECIFIED
-
-NI-780S-4Tape & Reel (TR)2011Discontinued3 (168 Hours)EAR99130V8541.29.00.75230MHz100mALDMOS (Dual)26.5dB300W50VROHS3 Compliant-MRFE6VP6300--
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