NXP USA Inc. MRF8S9200NR3
- Part Number:
- MRF8S9200NR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2848082-MRF8S9200NR3
- Description:
- FET RF 70V 940MHZ OM780-2
- ECAD Model:
-
- Datasheet:
- MRF8S9200NR3
NXP USA Inc. MRF8S9200NR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF8S9200NR3.
- Factory Lead Time10 Weeks
- Package / CaseOM-780-2
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated70V
- Additional FeatureESD PROTECTED
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency940MHz
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-CDFP-F2
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test1.4A
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Gain19.9dB
- DS Breakdown Voltage-Min70V
- Power - Output58W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
MRF8S9200NR3 Description
Constructed for 920 to 960 MHz CDMA base station applications. Suitable for all common cellular base station modulation formats in Class AB and Class C. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
MRF8S9200NR3 Features
? Protection from Integrated ESD
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
? Plastic Package with 225°C Capability
? Created with Digital Predistortion Error Correction Systems in mind
? Designed with Doherty Applications in Mind
MRF8S9200NR3 Applications
Switching applications
Constructed for 920 to 960 MHz CDMA base station applications. Suitable for all common cellular base station modulation formats in Class AB and Class C. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
MRF8S9200NR3 Features
? Protection from Integrated ESD
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
? Plastic Package with 225°C Capability
? Created with Digital Predistortion Error Correction Systems in mind
? Designed with Doherty Applications in Mind
MRF8S9200NR3 Applications
Switching applications
MRF8S9200NR3 More Descriptions
Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V
RF Power Transistor,920 to 960 MHz, 200 W, Typ Gain in dB is 19.9 @ 940 MHz, 28 V, LDMOS, SOT1823
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF Power Transistor,920 to 960 MHz, 200 W, Typ Gain in dB is 19.9 @ 940 MHz, 28 V, LDMOS, SOT1823
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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