MRF8P20161HSR3

NXP USA Inc. MRF8P20161HSR3

Part Number:
MRF8P20161HSR3
Manufacturer:
NXP USA Inc.
Ventron No:
2477329-MRF8P20161HSR3
Description:
FET RF 2CH 65V 1.92GHZ NI-780S
ECAD Model:
Datasheet:
MRF8P20161HSR

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
NXP USA Inc. MRF8P20161HSR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF8P20161HSR3.
  • Factory Lead Time
    10 Weeks
  • Package / Case
    NI-780S-4
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Voltage - Rated
    65V
  • HTS Code
    8541.29.00.75
  • Subcategory
    FET General Purpose Power
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    1.92GHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • JESD-30 Code
    R-CDFP-F4
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    225°C
  • Number of Elements
    2
  • Configuration
    COMMON SOURCE, 2 ELEMENTS
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Current - Test
    550mA
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS (Dual)
  • Gain
    16.4dB
  • DS Breakdown Voltage-Min
    65V
  • Power - Output
    37W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    28V
  • RoHS Status
    ROHS3 Compliant
Description
MRF8P20161HSR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8P20161HSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8P20161HSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF8P20161HSR3 More Descriptions
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-1920 MHz, 37 W Avg., 28 V
RF Mosfet LDMOS (Dual) 28 V 550 mA 1.92GHz 16.4dB 37W NI-780S-4
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
RF MOSFET Transistors HV8 2GHZ 161W NI780HS-4
RF Power Field-Effect Transistors
RF 2-ELEMENT, S BAND, N-CHANNEL
FET RF 2CH 65V 1.92GHZ NI-780S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.