NXP USA Inc. MRF8P20161HSR3
- Part Number:
- MRF8P20161HSR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477329-MRF8P20161HSR3
- Description:
- FET RF 2CH 65V 1.92GHZ NI-780S
- Datasheet:
- MRF8P20161HSR
NXP USA Inc. MRF8P20161HSR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF8P20161HSR3.
- Factory Lead Time10 Weeks
- Package / CaseNI-780S-4
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2010
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency1.92GHz
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-CDFP-F4
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements2
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test550mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS (Dual)
- Gain16.4dB
- DS Breakdown Voltage-Min65V
- Power - Output37W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
MRF8P20161HSR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8P20161HSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8P20161HSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8P20161HSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8P20161HSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF8P20161HSR3 More Descriptions
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-1920 MHz, 37 W Avg., 28 V
RF Mosfet LDMOS (Dual) 28 V 550 mA 1.92GHz 16.4dB 37W NI-780S-4
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
RF MOSFET Transistors HV8 2GHZ 161W NI780HS-4
RF Power Field-Effect Transistors
RF 2-ELEMENT, S BAND, N-CHANNEL
FET RF 2CH 65V 1.92GHZ NI-780S
RF Mosfet LDMOS (Dual) 28 V 550 mA 1.92GHz 16.4dB 37W NI-780S-4
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
RF MOSFET Transistors HV8 2GHZ 161W NI780HS-4
RF Power Field-Effect Transistors
RF 2-ELEMENT, S BAND, N-CHANNEL
FET RF 2CH 65V 1.92GHZ NI-780S
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