MPSW56RLRA

ON Semiconductor MPSW56RLRA

Part Number:
MPSW56RLRA
Manufacturer:
ON Semiconductor
Ventron No:
3585716-MPSW56RLRA
Description:
TRANS PNP 80V 0.5A TO-92
ECAD Model:
Datasheet:
MPSW56RLRA

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Specifications
ON Semiconductor MPSW56RLRA technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSW56RLRA.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.29.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -80V
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -500mA
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MPSW56
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    500mV
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 250mA 1V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 10mA, 250mA
  • Collector Emitter Breakdown Voltage
    80V
  • Current - Collector (Ic) (Max)
    500mA
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    -500mV
  • Collector Base Voltage (VCBO)
    -80V
  • Emitter Base Voltage (VEBO)
    4V
  • hFE Min
    100
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MPSW56RLRA Overview
In this device, the DC current gain is 50 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 250mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).50MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.

MPSW56RLRA Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz


MPSW56RLRA Applications
There are a lot of ON Semiconductor
MPSW56RLRA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MPSW56RLRA More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
TRANS PNP 80V 0.5A TO-92
Product Comparison
The three parts on the right have similar specifications to MPSW56RLRA.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    RoHS Status
    Lead Free
    Lifecycle Status
    Surface Mount
    Weight
    Pbfree Code
    Frequency
    Power Dissipation
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    JESD-30 Code
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Frequency - Transition
    View Compare
  • MPSW56RLRA
    MPSW56RLRA
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 Long Body (Formed Leads)
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e0
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.29.00.75
    Other Transistors
    -80V
    1W
    BOTTOM
    240
    not_compliant
    -500mA
    30
    MPSW56
    3
    Not Qualified
    1
    Single
    AMPLIFIER
    50MHz
    PNP
    PNP
    500mV
    500mA
    50 @ 250mA 1V
    500nA
    500mV @ 10mA, 250mA
    80V
    500mA
    50MHz
    -500mV
    -80V
    4V
    100
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MPSW42G
    -
    Through Hole
    TO-226-3, TO-92-3 Long Body
    3
    SILICON
    -55°C~150°C TJ
    Bulk
    2009
    e1
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    Other Transistors
    300V
    1W
    BOTTOM
    260
    -
    500mA
    40
    MPSW42
    3
    -
    1
    Single
    SWITCHING
    50MHz
    NPN
    NPN
    300V
    500mA
    40 @ 30mA 10V
    100nA ICBO
    500mV @ 2mA, 20mA
    300V
    -
    50MHz
    500mV
    600V
    6V
    25
    RoHS Compliant
    Lead Free
    LAST SHIPMENTS (Last Updated: 4 days ago)
    NO
    4.535924g
    yes
    50MHz
    1W
    6.35mm
    6.35mm
    25.4mm
    No SVHC
    No
    -
    -
    -
    -
    -
  • MPSW42
    -
    Through Hole
    TO-226-3, TO-92-3 Long Body
    3
    SILICON
    -55°C~150°C TJ
    Bulk
    2009
    e0
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.29.00.75
    Other Transistors
    300V
    1W
    BOTTOM
    240
    not_compliant
    500mA
    30
    MPSW42
    3
    Not Qualified
    1
    Single
    SWITCHING
    50MHz
    NPN
    NPN
    300V
    500mA
    40 @ 30mA 10V
    100nA ICBO
    500mV @ 2mA, 20mA
    300V
    -
    50MHz
    500mV
    300V
    6V
    25
    Non-RoHS Compliant
    Contains Lead
    -
    NO
    -
    -
    -
    1W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MPSW55RLRAG
    -
    Through Hole
    TO-226-3, TO-92-3 Long Body (Formed Leads)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e1
    Obsolete
    1 (Unlimited)
    3
    -
    TIN SILVER COPPER
    -
    -
    -
    -
    BOTTOM
    260
    -
    -
    40
    -
    3
    COMMERCIAL
    1
    -
    AMPLIFIER
    -
    PNP
    PNP
    -
    -
    50 @ 250mA 1V
    500nA
    500mV @ 10mA, 250mA
    -
    500mA
    50MHz
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    NO
    -
    yes
    -
    -
    -
    -
    -
    -
    -
    O-PBCY-T3
    SINGLE
    1W
    60V
    50MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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