ON Semiconductor MPSW56RLRA
- Part Number:
- MPSW56RLRA
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585716-MPSW56RLRA
- Description:
- TRANS PNP 80V 0.5A TO-92
- Datasheet:
- MPSW56RLRA
ON Semiconductor MPSW56RLRA technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSW56RLRA.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMPSW56
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 250mA 1V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 250mA
- Collector Emitter Breakdown Voltage80V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-500mV
- Collector Base Voltage (VCBO)-80V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MPSW56RLRA Overview
In this device, the DC current gain is 50 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 250mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).50MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MPSW56RLRA Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSW56RLRA Applications
There are a lot of ON Semiconductor
MPSW56RLRA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 50 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 250mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).50MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MPSW56RLRA Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSW56RLRA Applications
There are a lot of ON Semiconductor
MPSW56RLRA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSW56RLRA More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
TRANS PNP 80V 0.5A TO-92
TRANS PNP 80V 0.5A TO-92
The three parts on the right have similar specifications to MPSW56RLRA.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeLifecycle StatusSurface MountWeightPbfree CodeFrequencyPower DissipationHeightLengthWidthREACH SVHCRadiation HardeningJESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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MPSW56RLRAThrough HoleThrough HoleTO-226-3, TO-92-3 Long Body (Formed Leads)3SILICON-55°C~150°C TJTape & Reel (TR)2009e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.75Other Transistors-80V1WBOTTOM240not_compliant-500mA30MPSW563Not Qualified1SingleAMPLIFIER50MHzPNPPNP500mV500mA50 @ 250mA 1V500nA500mV @ 10mA, 250mA80V500mA50MHz-500mV-80V4V100Non-RoHS CompliantContains Lead-----------------
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-Through HoleTO-226-3, TO-92-3 Long Body3SILICON-55°C~150°C TJBulk2009e1Obsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)-Other Transistors300V1WBOTTOM260-500mA40MPSW423-1SingleSWITCHING50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V-50MHz500mV600V6V25RoHS CompliantLead FreeLAST SHIPMENTS (Last Updated: 4 days ago)NO4.535924gyes50MHz1W6.35mm6.35mm25.4mmNo SVHCNo-----
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-Through HoleTO-226-3, TO-92-3 Long Body3SILICON-55°C~150°C TJBulk2009e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.75Other Transistors300V1WBOTTOM240not_compliant500mA30MPSW423Not Qualified1SingleSWITCHING50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V-50MHz500mV300V6V25Non-RoHS CompliantContains Lead-NO---1W----------
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-Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)-SILICON-55°C~150°C TJTape & Reel (TR)-e1Obsolete1 (Unlimited)3-TIN SILVER COPPER----BOTTOM260--40-3COMMERCIAL1-AMPLIFIER-PNPPNP--50 @ 250mA 1V500nA500mV @ 10mA, 250mA-500mA50MHz----ROHS3 Compliant--NO-yes-------O-PBCY-T3SINGLE1W60V50MHz
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