ON Semiconductor MPSW42RLRA
- Part Number:
- MPSW42RLRA
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069264-MPSW42RLRA
- Description:
- TRANS NPN 300V 0.5A TO92
- Datasheet:
- MPSW42RLRA
ON Semiconductor MPSW42RLRA technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSW42RLRA.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Package / CaseTO-92-3
- Surface MountNO
- Number of Pins3
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.29.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormTHROUGH-HOLE
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- JEDEC-95 CodeTO-226
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min25
- DC Current Gain-Min (hFE)40
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MPSW42RLRA Overview
This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSW42RLRA Features
a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW42RLRA Applications
There are a lot of ON Semiconductor
MPSW42RLRA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSW42RLRA Features
a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW42RLRA Applications
There are a lot of ON Semiconductor
MPSW42RLRA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSW42RLRA More Descriptions
1.0 W High Voltage NPN Bipolar Transistor
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 T/R
RES SMD 6.8K OHM 1% 1/10W 0603
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 T/R
RES SMD 6.8K OHM 1% 1/10W 0603
The three parts on the right have similar specifications to MPSW42RLRA.
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ImagePart NumberManufacturerLifecycle StatusPackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPolarityElement ConfigurationTransistor ApplicationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinDC Current Gain-Min (hFE)RoHS StatusLead FreeMounting TypeWeightTransistor Element MaterialOperating TemperatureFrequencyBase Part NumberPower DissipationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcHeightLengthWidthREACH SVHCRadiation HardeningMax Breakdown VoltageFrequency - TransitionSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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MPSW42RLRALAST SHIPMENTS (Last Updated: 1 week ago)TO-92-3NO3Cut Tape (CT)2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)150°C-55°C8541.29.00.75Other Transistors300V1WBOTTOMTHROUGH-HOLE240not_compliant500mA303Not Qualified1NPNSingleSWITCHING50MHz300V500mATO-226300V50MHz500mV300V6V2540Non-RoHS CompliantContains Lead------------------------
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LAST SHIPMENTS (Last Updated: 4 days ago)TO-226-3, TO-92-3 Long BodyNO3Bulk2009e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)---Other Transistors300V1WBOTTOM-260-500mA403-1-SingleSWITCHING50MHz300V500mA-300V50MHz500mV600V6V25-RoHS CompliantLead FreeThrough Hole4.535924gSILICON-55°C~150°C TJ50MHzMPSW421WNPNNPN40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA6.35mm6.35mm25.4mmNo SVHCNo------
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LAST SHIPMENTS (Last Updated: 1 week ago)TO-226-3, TO-92-3 Long Body (Formed Leads)NO3Tape & Reel (TR)2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)---Other Transistors50V1WBOTTOM-260-1A403-1NPNSingleAMPLIFIER-50V1A-50V100MHz1.5V60V12V4000-RoHS CompliantLead FreeThrough Hole4.535924gSILICON-55°C~150°C TJ-MPSW45A1W-NPN - Darlington25000 @ 200mA 5V100nA ICBO1.5V @ 2mA, 1A6.35mm6.35mm25.4mmNo SVHCNo50V100MHz----
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-TO-226-3, TO-92-3 Long Body (Formed Leads)--Tape & Reel (TR)---Obsolete1 (Unlimited)--------------------------------ROHS3 Compliant-Through Hole---55°C~150°C TJ----NPN - Darlington10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA------125MHzTO-92 (TO-226)1W30V1A
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