ON Semiconductor MPSW42RLRAG
- Part Number:
- MPSW42RLRAG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465945-MPSW42RLRAG
- Description:
- TRANS NPN 300V 0.5A TO92
- Datasheet:
- MPSW42RLRAG
ON Semiconductor MPSW42RLRAG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSW42RLRAG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMPSW42
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min25
- Height6.35mm
- Length6.35mm
- Width12.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MPSW42RLRAG Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSW42RLRAG Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW42RLRAG Applications
There are a lot of ON Semiconductor
MPSW42RLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSW42RLRAG Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW42RLRAG Applications
There are a lot of ON Semiconductor
MPSW42RLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSW42RLRAG More Descriptions
1.0 W High Voltage NPN Bipolar Transistor
BIPOLAR TRANSISTOR, NPN, 300V TO-92, FULL REEL
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 T/R
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:300V; Collector Emitter Saturation Voltage, Vce(sat):40V; Power Dissipation, Pd:1W; DC Current Gain Min (hfe):40; Package/Case:TO-92 ;RoHS Compliant: Yes
BIPOLAR TRANSISTOR, NPN, 300V TO-92, FULL REEL
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 T/R
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:300V; Collector Emitter Saturation Voltage, Vce(sat):40V; Power Dissipation, Pd:1W; DC Current Gain Min (hfe):40; Package/Case:TO-92 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MPSW42RLRAG.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePolarityFrequency - TransitionMax Operating TemperatureMin Operating TemperatureHTS CodeTerminal FormReach Compliance CodeQualification StatusJEDEC-95 CodeDC Current Gain-Min (hFE)View Compare
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MPSW42RLRAGLAST SHIPMENTS (Last Updated: 1 day ago)Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)NO34.535924gSILICON-55°C~150°C TJCut Tape (CT)2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors300V1WBOTTOM260500mA50MHz40MPSW4231Single1WSWITCHING50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V300V6V256.35mm6.35mm12.7mmUnknownNoRoHS CompliantLead Free-----------
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LAST SHIPMENTS (Last Updated: 4 days ago)Through HoleTO-226-3, TO-92-3 Long BodyNO34.535924gSILICON-55°C~150°C TJBulk2009e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors300V1WBOTTOM260500mA50MHz40MPSW4231Single1WSWITCHING50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV-600V6V256.35mm6.35mm25.4mmNo SVHCNoRoHS CompliantLead Free----------
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LAST SHIPMENTS (Last Updated: 1 week ago)Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)NO34.535924gSILICON-55°C~150°C TJTape & Reel (TR)2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors50V1WBOTTOM2601A-40MPSW45A31Single1WAMPLIFIER--NPN - Darlington50V1A25000 @ 200mA 5V100nA ICBO1.5V @ 2mA, 1A50V100MHz1.5V50V60V12V40006.35mm6.35mm25.4mmNo SVHCNoRoHS CompliantLead FreeNPN100MHz--------
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LAST SHIPMENTS (Last Updated: 1 week ago)-TO-92-3NO3---Cut Tape (CT)2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors300V1WBOTTOM240500mA-30-31Single-SWITCHING50MHz--300V500mA---300V50MHz500mV-300V6V25-----Non-RoHS CompliantContains LeadNPN-150°C-55°C8541.29.00.75THROUGH-HOLEnot_compliantNot QualifiedTO-22640
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