ON Semiconductor MPSA92RLRAG
- Part Number:
- MPSA92RLRAG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846183-MPSA92RLRAG
- Description:
- TRANS PNP 300V 0.5A TO92
- ECAD Model:
-
- Datasheet:
- MPSA92RLRAG
ON Semiconductor MPSA92RLRAG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA92RLRAG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 22 hours ago)
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2010
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMPSA92
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 30mA 10V
- Current - Collector Cutoff (Max)250nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MPSA92RLRAG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 30mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 500mA volts.
MPSA92RLRAG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRAG Applications
There are a lot of ON Semiconductor
MPSA92RLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 30mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 500mA volts.
MPSA92RLRAG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRAG Applications
There are a lot of ON Semiconductor
MPSA92RLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA92RLRAG More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
ON Semi MPSA92RLRAG PNP High Voltage Bipolar Transistor,0.5 A,300V,3-Pin TO-92 | ON Semiconductor MPSA92RLRAG
Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 T/R
BIPOLAR TRANSISTOR, PNP -300V TO-92
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:300V; Collector Emitter Saturation Voltage, Vce(sat):25V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):25; Package/Case:TO-92 ;RoHS Compliant: Yes
BIPOLAR TRANSISTOR, PNP -300V TO-92; Tra; BIPOLAR TRANSISTOR, PNP -300V TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:50; No. of Pins:3
ON Semi MPSA92RLRAG PNP High Voltage Bipolar Transistor,0.5 A,300V,3-Pin TO-92 | ON Semiconductor MPSA92RLRAG
Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 T/R
BIPOLAR TRANSISTOR, PNP -300V TO-92
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:300V; Collector Emitter Saturation Voltage, Vce(sat):25V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):25; Package/Case:TO-92 ;RoHS Compliant: Yes
BIPOLAR TRANSISTOR, PNP -300V TO-92; Tra; BIPOLAR TRANSISTOR, PNP -300V TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:50; No. of Pins:3
The three parts on the right have similar specifications to MPSA92RLRAG.
-
ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackageView Compare
-
MPSA92RLRAGLAST SHIPMENTS (Last Updated: 22 hours ago)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO34.535924gSILICON-55°C~150°C TJCut Tape (CT)2010e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors-300V625mWBOTTOM260-500mA50MHz40MPSA9231Single625mWAMPLIFIER50MHzPNPPNP300V500mA25 @ 30mA 10V250nA ICBO500mV @ 2mA, 20mA300V50MHz-500mV300V300V5V255.33mm5.2mm4.19mmUnknownNoRoHS CompliantLead Free---------- -
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO--SILICON-55°C~150°C TJCut Tape (CT)2006e3yesLast Time Buy1 (Unlimited)3EAR99Matte Tin (Sn)---BOTTOMNOT SPECIFIED--NOT SPECIFIED-31----NPNNPN--80 @ 10mA 10V250nA ICBO500mV @ 2mA, 20mA-50MHz----------ROHS3 Compliant-8 WeeksO-PBCY-T3Not QualifiedSINGLE625mW300V300mA50MHz-
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MPSA18-------NPN--500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA------------------625mW45V100mA100MHzTO-92-3
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-----55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)-----------MPSA05-------NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA------------------625mW60V500mA100MHzTO-92-3
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 March 2024
L9110S Advantages, Pinout, Working Principle and Application
Ⅰ. L9110S overviewⅡ. Advantages of L9110SⅢ. L9110S pin configurationⅣ. Hardware introduction of L9110S motor drive moduleⅤ. Working principle of L9110S motor drive moduleⅥ. L9110S application circuitⅦ. How to... -
20 March 2024
PCF8563 Alternatives, Characteristics, Functions and More
Ⅰ. Introduction to PCF8563Ⅱ. Characteristics of PCF8563Ⅲ. Main functions of PCF8563Ⅳ. Block diagram of PCF8563Ⅴ. How does PCF8563 work?Ⅵ. Application circuit of PCF8563Ⅶ. Limiting values of PCF8563Ⅷ. How... -
21 March 2024
RC0402FR-075K1L Characteristics, Specifications, Construction and Other Details
Ⅰ. Overview of RC0402FR-075K1LⅡ. Characteristics of RC0402FR-075K1LⅢ. Specifications of RC0402FR-075K1LⅣ. Construction of RC0402FR-075K1LⅤ. Application of RC0402FR-075K1LⅥ. Inventory history of RC0402FR-075K1LⅦ. Manufacturer of RC0402FR-075K1LⅧ. How to use RC0402FR-075K1L resistor... -
21 March 2024
A Comprehensive Guide to AO3400 Field-Effect Transistor
Ⅰ. Introduction to AO3400Ⅱ. AO3400 technical parametersⅢ. AO3400 symbol, footprint and pin configurationⅣ. AO3400 principle of operationⅤ. What is the typical circuit application of AO3400?Ⅵ. Manufacturer of AO3400Ⅶ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.