NXP USA Inc. MPSA92,126
- Part Number:
- MPSA92,126
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2468500-MPSA92,126
- Description:
- TRANS PNP 300V 0.1A SOT54
- ECAD Model:
-
- Datasheet:
- MPSA92
NXP USA Inc. MPSA92,126 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MPSA92,126.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMPSA92
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 30mA 10V
- Current - Collector Cutoff (Max)250nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Voltage - Collector Emitter Breakdown (Max)300V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency50MHz
- Frequency - Transition50MHz
- Power Dissipation-Max (Abs)0.625W
- VCEsat-Max0.5 V
- Collector-Base Capacitance-Max6pF
- RoHS StatusROHS3 Compliant
MPSA92,126 Overview
This device has a DC current gain of 25 @ 30mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 50MHz.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.
MPSA92,126 Features
the DC current gain for this device is 25 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz
MPSA92,126 Applications
There are a lot of NXP USA Inc.
MPSA92,126 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 25 @ 30mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 50MHz.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.
MPSA92,126 Features
the DC current gain for this device is 25 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz
MPSA92,126 Applications
There are a lot of NXP USA Inc.
MPSA92,126 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA92,126 More Descriptions
PNP HIGH-VOLTAGE TRANSISTOR
TRANS PNP 300V 0.1A SOT54
IC REG LINEAR 0.9V 300MA 4UDFN
TRANS PNP 300V 0.1A SOT54
IC REG LINEAR 0.9V 300MA 4UDFN
The three parts on the right have similar specifications to MPSA92,126.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxCollector-Base Capacitance-MaxRoHS StatusLifecycle StatusMountNumber of PinsWeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingPolarityPower Dissipation-MaxElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthLead FreeSupplier Device PackageView Compare
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MPSA92,126Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Box (TB)2009e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.21.00.95Other TransistorsBOTTOMNOT SPECIFIEDunknownNOT SPECIFIEDMPSA923O-PBCY-T3Not Qualified1SINGLE625mWSWITCHINGPNPPNP25 @ 30mA 10V250nA ICBO500mV @ 2mA, 20mA300V100mA50MHz50MHz0.625W0.5 V6pFROHS3 Compliant-------------------------- -
-TO-92---Bulk2004----------------1-----------125MHz---RoHS CompliantOBSOLETE (Last Updated: 14 hours ago)Through Hole3201mg150°C-65°C30V100mANPN625mWSingle350mW30V100nA30V1.5V30V10V10000500mA5.33mm5.2mm4.19mmLead Free-
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)---------MPSA18-----625mW--NPN500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V100mA-100MHz----------------------------TO-92-3
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)--Obsolete1 (Unlimited)---------MPSA05-----625mW--NPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA-100MHz----------------------------TO-92-3
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