ON Semiconductor MPSA27
- Part Number:
- MPSA27
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585690-MPSA27
- Description:
- TRANS NPN DARL 60V 0.5A TO-92
- Datasheet:
- MPSA27/PZTA27 MPSA27
ON Semiconductor MPSA27 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA27.
- Voltage - Collector Emitter Breakdown (Max):60V
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
- Transistor Type:NPN - Darlington
- Supplier Device Package:TO-92-3
- Series:-
- Power - Max:625mW
- Packaging:Bulk
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:-
- DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
- Current - Collector Cutoff (Max):500nA
- Current - Collector (Ic) (Max):500mA
Images are for reference only.See Product Specifications for product details.If you are interested to buy AMI Semiconductor / ON Semiconductor MPSA27.
MPSA27 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-226AA
Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 10000 @ 100mA 5V 500mA 625mW 125MHz
NPN Bipolar Darlington Transistor
Trans Darlington NPN 60V 0.8A 3-Pin TO-92 Bulk
Darlington Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.625W; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):10000; Collector Current:0.5A; Package/Case:TO-92; Leaded Process Compatible:No RoHS Compliant: No
Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 10000 @ 100mA 5V 500mA 625mW 125MHz
NPN Bipolar Darlington Transistor
Trans Darlington NPN 60V 0.8A 3-Pin TO-92 Bulk
Darlington Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.625W; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):10000; Collector Current:0.5A; Package/Case:TO-92; Leaded Process Compatible:No RoHS Compliant: No
The three parts on the right have similar specifications to MPSA27.
-
ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusMountPackage / CaseNumber of PinsWeightPackagingPublishedMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingNumber of ElementsPolarityPower Dissipation-MaxElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthRoHS StatusLead FreeMounting TypeSupplier Device PackageOperating TemperaturePart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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MPSA2760V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-10000 @ 100mA, 5V500nA500mA--------------------------------------------
-
--------------OBSOLETE (Last Updated: 14 hours ago)Through HoleTO-923201mgBulk2004150°C-65°C30V100mA1NPN625mWSingle350mW30V100nA30V1.5V125MHz30V10V10000500mA5.33mm5.2mm4.19mmRoHS CompliantLead Free-------------
-
----------------TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--Tape & Reel (TR)------------------------Through HoleTO-92-3-55°C~150°C TJObsolete1 (Unlimited)MPSA12625mWNPN - Darlington20000 @ 10mA 5V100nA1V @ 10μA, 10mA20V1.2A
-
----------------TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--Tape & Box (TB)--------------100MHz---------Through HoleTO-92-3-55°C~150°C TJObsolete1 (Unlimited)MPSA05625mWNPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA
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