ON Semiconductor MPSA13RLRA
- Part Number:
- MPSA13RLRA
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069145-MPSA13RLRA
- Description:
- TRANS NPN DARL 30V 0.5A TO92
- Datasheet:
- MPSA13RLRA
ON Semiconductor MPSA13RLRA technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA13RLRA.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMPSA13
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- Continuous Collector Current500mA
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MPSA13RLRA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 125MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA13RLRA Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA13RLRA Applications
There are a lot of ON Semiconductor
MPSA13RLRA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 125MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA13RLRA Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA13RLRA Applications
There are a lot of ON Semiconductor
MPSA13RLRA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA13RLRA More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Compliant NPN Contains Lead Cut Tape (CT) TO-92-3 500 mA 3 Obsolete (Last Updated: 2 years ago)
NPN Bipolar Darlington Transistor
Trans Darlington NPN 30V 0.5A 3-Pin TO-92 T/R
Compliant NPN Contains Lead Cut Tape (CT) TO-92-3 500 mA 3 Obsolete (Last Updated: 2 years ago)
NPN Bipolar Darlington Transistor
Trans Darlington NPN 30V 0.5A 3-Pin TO-92 T/R
The three parts on the right have similar specifications to MPSA13RLRA.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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MPSA13RLRALAST SHIPMENTS (Last Updated: 6 days ago)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO3SILICON-55°C~150°C TJTape & Reel (TR)2007e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.75Other Transistors30V625mWBOTTOM240not_compliant500mA30MPSA133Not Qualified1NPNSingle625mWAMPLIFIERNPN - Darlington30V500mA10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz30V125MHz30V10V500mANon-RoHS CompliantContains Lead-----
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-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)------------MPSA12-------NPN - Darlington--20000 @ 10mA 5V100nA1V @ 10μA, 10mA---------TO-92-3625mW20V1.2A
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-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)------------MPSA18-------NPN--500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA---100MHz-----TO-92-3625mW45V100mA
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-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)------------MPSA05-------NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA---100MHz-----TO-92-3625mW60V500mA
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