Fairchild/ON Semiconductor MPSA06_D27Z
- Part Number:
- MPSA06_D27Z
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2468987-MPSA06_D27Z
- Description:
- TRANS NPN 80V 0.5A TO-92
- ECAD Model:
-
- Datasheet:
- MPSA06, MMBTA06, PZTA06
Fairchild/ON Semiconductor MPSA06_D27Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPSA06_D27Z.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation625mW
- Frequency100MHz
- Base Part NumberMPSA06
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Gain Bandwidth Product100MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage80V
- Collector Emitter Saturation Voltage250mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
MPSA06_D27Z Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.A maximum collector current of 500mA volts is possible.
MPSA06_D27Z Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
MPSA06_D27Z Applications
There are a lot of ON Semiconductor
MPSA06_D27Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.A maximum collector current of 500mA volts is possible.
MPSA06_D27Z Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
MPSA06_D27Z Applications
There are a lot of ON Semiconductor
MPSA06_D27Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA06_D27Z More Descriptions
Trans GP BJT NPN 80V 0.5A 3-Pin TO-92 T/R
Compliant Through Hole 100 NPN 100 MHz Tape & Reel TO-92-3 3
NPN General Purpose Amplifier
RES SMD 43K OHM 5% 2/3W 1210
Compliant Through Hole 100 NPN 100 MHz Tape & Reel TO-92-3 3
NPN General Purpose Amplifier
RES SMD 43K OHM 5% 2/3W 1210
The three parts on the right have similar specifications to MPSA06_D27Z.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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MPSA06_D27ZThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)625mW100MHzMPSA061Single625mW100MHzNPN80V500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V250mV80V4V100NoRoHS Compliant-------------------- -
----------------------------30V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A-----
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)--MPSA18----NPN--500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA---------------------TO-92-3625mW45V100mA100MHz
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)--MPSA05----NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA---------------------TO-92-3625mW60V500mA100MHz
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