Fairchild/ON Semiconductor MPSA06_D26Z
- Part Number:
- MPSA06_D26Z
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2465761-MPSA06_D26Z
- Description:
- TRANS NPN 80V 0.5A TO-92
- ECAD Model:
-
- Datasheet:
- MPSA06, MMBTA06, PZTA06
Fairchild/ON Semiconductor MPSA06_D26Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPSA06_D26Z.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberMPSA06
- Power - Max625mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)500mA
- Frequency - Transition100MHz
MPSA06_D26Z Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 80V.
MPSA06_D26Z Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92-3
MPSA06_D26Z Applications
There are a lot of ON Semiconductor
MPSA06_D26Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 80V.
MPSA06_D26Z Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92-3
MPSA06_D26Z Applications
There are a lot of ON Semiconductor
MPSA06_D26Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA06_D26Z More Descriptions
TRANS NPN 80V 0.5A TO-92
The three parts on the right have similar specifications to MPSA06_D26Z.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MPSA06_D26ZThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MPSA06625mWNPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V500mA100MHz--------------- -
----------------30V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A
-
----------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MPSA12625mWNPN - Darlington20000 @ 10mA 5V100nA1V @ 10μA, 10mA20V1.2A---------------
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