ON Semiconductor MPSA05RLRA
- Part Number:
- MPSA05RLRA
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466952-MPSA05RLRA
- Description:
- TRANS NPN 60V 0.5A TO92
- ECAD Model:
-
- Datasheet:
- MPSA05RLRA
ON Semiconductor MPSA05RLRA technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA05RLRA.
- Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn80Pb20)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMPSA05
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage250mV
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MPSA05RLRA Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 500mA volts.
MPSA05RLRA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RLRA Applications
There are a lot of ON Semiconductor
MPSA05RLRA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 500mA volts.
MPSA05RLRA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RLRA Applications
There are a lot of ON Semiconductor
MPSA05RLRA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA05RLRA More Descriptions
Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 625mW Through Hole TO-92
The three parts on the right have similar specifications to MPSA05RLRA.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeFactory Lead TimeJESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MPSA05RLRAOBSOLETE (Last Updated: 2 days ago)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO3SILICON-55°C~150°C TJCut Tape (CT)2007e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn80Pb20)8541.21.00.95Other Transistors60V625mWBOTTOM240not_compliant500mA30MPSA053Not Qualified1SingleAMPLIFIER100MHzNPNNPN250mV500mA100 @ 10mA 1V100nA250mV @ 10mA, 100mA60V100MHz250mV60V4V100Non-RoHS CompliantContains Lead---------------------- -
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO-SILICON-55°C~150°C TJCut Tape (CT)2006e3yesLast Time Buy1 (Unlimited)3EAR99Matte Tin (Sn)----BOTTOMNOT SPECIFIED--NOT SPECIFIED-3Not Qualified1---NPNNPN--80 @ 10mA 10V250nA ICBO500mV @ 2mA, 20mA-50MHz----ROHS3 Compliant-8 WeeksO-PBCY-T3SINGLE625mW300V300mA50MHz--------------
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------------------------------------------------------30V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A
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------------------------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A
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