Central Semiconductor Corp MPS650
- Part Number:
- MPS650
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2464337-MPS650
- Description:
- TRANS NPN 40V 2A TO-92
- Datasheet:
- MPS650
Central Semiconductor Corp MPS650 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp MPS650.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Package / CaseTO-92
- Published2014
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- ConfigurationSINGLE
- Power Dissipation-Max625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product75MHz
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current2A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency75MHz
- Collector Emitter Saturation Voltage500mV
- Frequency - Transition75MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- DC Current Gain-Min (hFE)40
- RoHS StatusNon-RoHS Compliant
MPS650 Overview
Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 75MHz.During maximum operation, collector current can be as low as 2A volts.
MPS650 Features
a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 5V
a transition frequency of 75MHz
MPS650 Applications
There are a lot of Central Semiconductor
MPS650 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 75MHz.During maximum operation, collector current can be as low as 2A volts.
MPS650 Features
a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 5V
a transition frequency of 75MHz
MPS650 Applications
There are a lot of Central Semiconductor
MPS650 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPS650 More Descriptions
Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 40V 2A 3-Pin TO-92 Bulk
GENERAL PURPOSE NPN TRANSISTOR
Trans GP BJT NPN 40V 2A 3-Pin TO-92 Bulk
GENERAL PURPOSE NPN TRANSISTOR
The three parts on the right have similar specifications to MPS650.
-
ImagePart NumberManufacturerFactory Lead TimeMountPackage / CasePublishedJESD-609 CodePbfree CodePart StatusNumber of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPolarityConfigurationPower Dissipation-MaxTransistor ApplicationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinDC Current Gain-Min (hFE)RoHS StatusMounting TypeSurface MountTransistor Element MaterialOperating TemperaturePackagingMoisture Sensitivity Level (MSL)Power - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Supplier Device PackageBase Part NumberView Compare
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MPS6508 WeeksThrough HoleTO-922014e0noActive3EAR99Tin/Lead (Sn/Pb)150°C-65°C8541.21.00.95Other TransistorsBOTTOMNOT SPECIFIEDnot_compliantNOT SPECIFIED3O-PBCY-T3Not Qualified1NPNSINGLE625mWSWITCHING75MHz500mV2A40V75MHz500mV75MHz60V5V4040Non-RoHS Compliant-----------------
-
--TO-226-3, TO-92-3 (TO-226AA)---Obsolete3------BOTTOM-unknown-3O-PBCY-T3COMMERCIAL1-SINGLE-SWITCHING-----------ROHS3 CompliantThrough HoleNOSILICON-55°C~150°C TJBulk1 (Unlimited)625mWNPNNPN90 @ 2mA 10V50nA ICBO500mV @ 5mA, 50mA30V200mA--
-
--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-e0yesObsolete3-TIN LEAD----BOTTOM240-303O-PBCY-T3COMMERCIAL1-SINGLE-AMPLIFIER----75MHz-75MHz----Non-RoHS CompliantThrough HoleNOSILICON-55°C~150°C TJTape & Reel (TR)1 (Unlimited)625mWNPNNPN75 @ 1A 2V100nA ICBO500mV @ 200mA, 2A60V2A--
-
--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---Obsolete-------------------------75MHz-----Through Hole--150°C TJTape & Reel (TR)1 (Unlimited)625mW-NPN75 @ 500mA 2V100nA ICBO500mV @ 200mA, 2A60V800mATO-92-3MPS651
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