Diodes Incorporated MMSTA63-7-F
- Part Number:
- MMSTA63-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463855-MMSTA63-7-F
- Description:
- TRANS PNP DARL 30V 0.5A SC70-3
- Datasheet:
- MMSTA63-7-F
Diodes Incorporated MMSTA63-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMSTA63-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMSTA63
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power - Max200mW
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- hFE Min5000
- Height1mm
- Length2.2mm
- Width1.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMSTA63-7-F Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMSTA63-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMSTA63-7-F Applications
There are a lot of Diodes Incorporated
MMSTA63-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMSTA63-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMSTA63-7-F Applications
There are a lot of Diodes Incorporated
MMSTA63-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMSTA63-7-F More Descriptions
Trans Darlington PNP 30V 0.5A 3-Pin SOT-323 T/R
TRANS PNP DARL 30V 0.5A SOT323
Darlington Transistors -500V 200mW
TRANS PNP DARL 30V 0.5A SOT323
Darlington Transistors -500V 200mW
The three parts on the right have similar specifications to MMSTA63-7-F.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageTerminationMax Operating TemperatureMin Operating TemperatureFrequencyPower DissipationGain Bandwidth ProductVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyREACH SVHCQualification StatusDC Current Gain-Min (hFE)Continuous Collector CurrentReach Compliance CodePolarity/Channel TypeView Compare
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MMSTA63-7-F19 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-30V200mWDUALGULL WING260-500mA40MMSTA6331PNPSingle200mWSWITCHINGPNP - Darlington30V500mA10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V30V125MHz30V10V50001mm2.2mm1.35mmNoROHS3 CompliantLead Free-----------------
-
19 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mg--55°C~150°C TJTape & Reel (TR)2007--Active1 (Unlimited)----160V200mW---200mA-MMST5551-1NPNSingle200mW-NPN160V200mA80 @ 10mA 5V50nA ICBO200mV @ 5mA, 50mA160V-200mV160V300MHz180V6V801mm2.2mm1.35mmNoROHS3 CompliantLead FreeSOT-323SMD/SMT150°C-55°C300MHz200mW300MHz160V200mA300MHzNo SVHC-----
-
-Surface Mount-SOT-32336.010099mg--Tape & Reel (TR)2012e0noObsolete1 (Unlimited)3EAR99TIN LEAD--25V200mWDUALGULL WING235-200mA10-31PNPSingle-SWITCHING-400mV200mA---25V250MHz-400mV25V--25V-4V1201mm2.2mm1.35mm-ROHS3 CompliantContains Lead--150°C-55°C--250MHz---No SVHCNot Qualified60-200mA--
-
-Surface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2007e0noDiscontinued1 (Unlimited)3EAR99TIN LEAD-80V200mWDUALGULL WING235500mA10MMSTA0631-Single-SWITCHINGNPN250mV500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV80V-80V4V1001mm2.2mm1.35mm-Non-RoHS CompliantContains Lead------100MHz---No SVHCNot Qualified-500mAunknownNPN
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