Diodes Incorporated MMST5551-7-F
- Part Number:
- MMST5551-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068832-MMST5551-7-F
- Description:
- TRANS NPN 160V 0.2A SC70-3
- Datasheet:
- MMST5551-7-F
Diodes Incorporated MMST5551-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMST5551-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Supplier Device PackageSOT-323
- Weight6.010099mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC160V
- Max Power Dissipation200mW
- Current Rating200mA
- Frequency300MHz
- Base Part NumberMMST5551
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation200mW
- Power - Max200mW
- Gain Bandwidth Product300MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage160V
- Voltage - Collector Emitter Breakdown (Max)160V
- Current - Collector (Ic) (Max)200mA
- Max Frequency300MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage160V
- Frequency - Transition300MHz
- Collector Base Voltage (VCBO)180V
- Emitter Base Voltage (VEBO)6V
- hFE Min80
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMST5551-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 160V volts.This product comes in a SOT-323 device package from the supplier.Device displays Collector Emitter Breakdown (160V maximal voltage).Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMST5551-7-F Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
the supplier device package of SOT-323
MMST5551-7-F Applications
There are a lot of Diodes Incorporated
MMST5551-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 160V volts.This product comes in a SOT-323 device package from the supplier.Device displays Collector Emitter Breakdown (160V maximal voltage).Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMST5551-7-F Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
the supplier device package of SOT-323
MMST5551-7-F Applications
There are a lot of Diodes Incorporated
MMST5551-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMST5551-7-F More Descriptions
MMST5551 Series NPN 160 V 200 mW Small Signal Transistor SMT - SOT-323-3
Trans GP BJT NPN 160V 0.2A 200mW 3-Pin SOT-323 T/R
Transistor NPN 160V 0.2A SOT323 | Diodes Inc MMST5551-7-F
TRANSISTOR, NPN, SOT323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 80; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Trans GP BJT NPN 160V 0.2A 200mW 3-Pin SOT-323 T/R
Transistor NPN 160V 0.2A SOT323 | Diodes Inc MMST5551-7-F
TRANSISTOR, NPN, SOT323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 80; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
The three parts on the right have similar specifications to MMST5551-7-F.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusPolarity/Channel TypeTransition FrequencyContinuous Collector CurrentTurn On Time-Max (ton)Transistor ApplicationView Compare
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MMST5551-7-F19 WeeksSurface MountSurface MountSC-70, SOT-3233SOT-3236.010099mg-55°C~150°C TJTape & Reel (TR)2007Active1 (Unlimited)SMD/SMT150°C-55°C160V200mW200mA300MHzMMST55511NPNSingle200mW200mW300MHzNPN160V200mA80 @ 10mA 5V50nA ICBO200mV @ 5mA, 50mA160V160V200mA300MHz200mV160V300MHz180V6V801mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free-------------------
-
-Surface MountSurface MountSC-70, SOT-3233-59.987591mg-55°C~150°C TJTape & Reel (TR)2007Obsolete1 (Unlimited)---40V200mW200mA-MMST39041-Single--300MHzNPN300mV200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V----40V-60V6V1001mm2.2mm1.35mm--Non-RoHS CompliantContains LeadSILICONe0no3EAR99Tin/Lead (Sn/Pb)DUALGULL WING235unknown103Not QualifiedNPN300MHz200mA70ns-
-
-Surface MountSurface MountSC-70, SOT-3233-59.987591mg-55°C~150°C TJTape & Reel (TR)2007Discontinued1 (Unlimited)---300V200mW200mA50MHzMMSTA421-Single200mW-50MHzNPN300V200mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V---500mV300V-300V6V251mm2.2mm1.35mmNo SVHC-Non-RoHS CompliantContains LeadSILICONe0no3EAR99TIN LEADDUALGULL WING235unknown103Not QualifiedNPN50MHz200mA-SWITCHING
-
-Surface MountSurface MountSC-70, SOT-3233-6.010099mg-55°C~150°C TJTape & Reel (TR)2007Discontinued1 (Unlimited)---80V200mW500mA-MMSTA061-Single--100MHzNPN250mV500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V---250mV80V-80V4V1001mm2.2mm1.35mmNo SVHC-Non-RoHS CompliantContains LeadSILICONe0no3EAR99TIN LEADDUALGULL WING235unknown103Not QualifiedNPN100MHz500mA-SWITCHING
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