Micro Commercial Co MMST5401-TP
- Part Number:
- MMST5401-TP
- Manufacturer:
- Micro Commercial Co
- Ventron No:
- 3813536-MMST5401-TP
- Description:
- TRANS PNP 150V 0.2A SOT323
- ECAD Model:
-
- Datasheet:
- MMST5401-TP
Micro Commercial Co MMST5401-TP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co MMST5401-TP.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMMST5401
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max200mW
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)150V
- Current - Collector (Ic) (Max)200mA
- Transition Frequency100MHz
- Frequency - Transition300MHz
- Power Dissipation-Max (Abs)0.2W
- RoHS StatusROHS3 Compliant
MMST5401-TP Overview
In this device, the DC current gain is 60 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 150V.
MMST5401-TP Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
MMST5401-TP Applications
There are a lot of Micro Commercial Co
MMST5401-TP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 60 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 150V.
MMST5401-TP Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
MMST5401-TP Applications
There are a lot of Micro Commercial Co
MMST5401-TP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMST5401-TP More Descriptions
Trans GP BJT PNP 150V 0.2A 200mW 3-Pin SOT-323 T/R
Bipolar Transistors - BJT -200mA 150V
Pnp Plastic-Encapsulate Transistors / 7" Reel
Bipolar Transistors - BJT -200mA 150V
Pnp Plastic-Encapsulate Transistors / 7" Reel
The three parts on the right have similar specifications to MMST5401-TP.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)RoHS StatusMountNumber of PinsWeightVoltage - Rated DCMax Power DissipationReach Compliance CodeCurrent RatingElement ConfigurationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentTurn On Time-Max (ton)HeightLengthWidthLead FreeFrequencyPower DissipationTransistor ApplicationCollector Emitter Saturation VoltageREACH SVHCMax Operating TemperatureMin Operating TemperaturePolarityDC Current Gain-Min (hFE)View Compare
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MMST5401-TP12 WeeksSurface MountSC-70, SOT-323YESSILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other TransistorsDUALGULL WING26010MMST54013R-PDSO-G3Not Qualified1SINGLE200mWPNPPNP60 @ 10mA 5V50nA500mV @ 5mA, 50mA150V200mA100MHz300MHz0.2WROHS3 Compliant-------------------------------- -
-Surface MountSC-70, SOT-323-SILICON-55°C~150°C TJTape & Reel (TR)2007e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)-DUALGULL WING23510MMST39043-Not Qualified1--NPNNPN100 @ 10mA 1V-300mV @ 5mA, 50mA--300MHz--Non-RoHS CompliantSurface Mount359.987591mg40V200mWunknown200mASingle300MHz300mV200mA40V40V60V6V100200mA70ns1mm2.2mm1.35mmContains Lead---------
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-Surface MountSC-70, SOT-323-SILICON-55°C~150°C TJTape & Reel (TR)2007e0noDiscontinued1 (Unlimited)3EAR99TIN LEAD-DUALGULL WING23510MMSTA423-Not Qualified1--NPNNPN40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA--50MHz--Non-RoHS CompliantSurface Mount359.987591mg300V200mWunknown200mASingle50MHz300V200mA300V300V300V6V25200mA-1mm2.2mm1.35mmContains Lead50MHz200mWSWITCHING500mVNo SVHC----
-
--SOT-323---Tape & Reel (TR)2012e0noObsolete1 (Unlimited)3EAR99TIN LEAD-DUALGULL WING23510-3-Not Qualified1---------250MHz--ROHS3 CompliantSurface Mount36.010099mg-25V200mW--200mASingle250MHz400mV200mA25V25V-25V-4V120-200mA-1mm2.2mm1.35mmContains Lead--SWITCHING-400mVNo SVHC150°C-55°CPNP60
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