Diodes Incorporated MMST4403-7-F

MMST4403-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.

MMST4403-7-F Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz


MMST4403-7-F Applications
There are a lot of Diodes Incorporated
MMST4403-7-F applications of single BJT transistors.


Inverter
Interface
Driver
Muting