Rohm Semiconductor MMST2907AT146
- Part Number:
- MMST2907AT146
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2463517-MMST2907AT146
- Description:
- TRANS PNP 60V 0.6A SOT-346
- Datasheet:
- MMST2907AT146
Rohm Semiconductor MMST2907AT146 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor MMST2907AT146.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-600mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberT2907A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power - Max200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)1.6V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-1.6V
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-5V
- hFE Min50
- Continuous Collector Current-600mA
- VCEsat-Max0.6 V
- Turn Off Time-Max (toff)100ns
- Collector-Base Capacitance-Max7pF
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMST2907AT146 Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1.6V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -600mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -600mA current rating.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMST2907AT146 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMST2907AT146 Applications
There are a lot of ROHM Semiconductor
MMST2907AT146 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1.6V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -600mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -600mA current rating.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMST2907AT146 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMST2907AT146 Applications
There are a lot of ROHM Semiconductor
MMST2907AT146 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMST2907AT146 More Descriptions
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 200mW Surface Mount SMT3
MMST2907A Series 60 V 0.6 A SMT PNP Medium Power Transistor -SC-59
Trans GP BJT PNP 60V 0.6A 3-Pin SMT T/R
MMST2907A Series 60 V 0.6 A SMT PNP Medium Power Transistor -SC-59
Trans GP BJT PNP 60V 0.6A 3-Pin SMT T/R
The three parts on the right have similar specifications to MMST2907AT146.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxTurn Off Time-Max (toff)Collector-Base Capacitance-MaxRadiation HardeningRoHS StatusLead FreeSurface MountJESD-30 CodeQualification StatusConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)Turn On Time-Max (ton)WeightReach Compliance CodeFrequencyPower DissipationHeightLengthWidthREACH SVHCMax Operating TemperatureMin Operating TemperaturePolarityDC Current Gain-Min (hFE)View Compare
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MMST2907AT14610 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)2007e1yesNot For New Designs1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors-60V200mWDUALGULL WING260-600mA10T2907A31Single200mWSWITCHING200MHzPNPPNP1.6V600mA100 @ 150mA 10V100nA1.6V @ 50mA, 500mA60V200MHz-1.6V60V-60V-5V50-600mA0.6 V100ns7pFNoROHS3 CompliantLead Free----------------------
-
12 Weeks-Surface MountSC-70, SOT-323-SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-Other Transistors--DUALGULL WING260-10MMST2907A31-200mW--PNPPNP--100 @ 150mA 10V50nA600mV @ 50mA, 500mA-200MHz-------110ns--ROHS3 Compliant-YESR-PDSO-G3Not QualifiedSINGLE60V600mA200MHz0.2W35ns------------
-
-Surface MountSurface MountSC-70, SOT-3233SILICON-55°C~150°C TJTape & Reel (TR)2007e0noDiscontinued1 (Unlimited)3EAR99TIN LEAD--300V200mWDUALGULL WING235200mA10MMSTA4231Single-SWITCHING50MHzNPNNPN300V200mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V300V6V25200mA----Non-RoHS CompliantContains Lead--Not Qualified------59.987591mgunknown50MHz200mW1mm2.2mm1.35mmNo SVHC----
-
-Surface Mount-SOT-3233--Tape & Reel (TR)2012e0noObsolete1 (Unlimited)3EAR99TIN LEAD---25V200mWDUALGULL WING235-200mA10-31Single-SWITCHING250MHz--400mV200mA---25V250MHz-400mV25V-25V-4V120-200mA----ROHS3 CompliantContains Lead--Not Qualified------6.010099mg---1mm2.2mm1.35mmNo SVHC150°C-55°CPNP60
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