NXP USA Inc. MMRF1020-04GNR3
- Part Number:
- MMRF1020-04GNR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477532-MMRF1020-04GNR3
- Description:
- FET RF 2CH 105V 920MHZ OM780-4G
- ECAD Model:
-
- Datasheet:
- MMRF1020-04GNR3
NXP USA Inc. MMRF1020-04GNR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MMRF1020-04GNR3.
- Factory Lead Time10 Weeks
- Package / CaseOM-780G-4L
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated105V
- HTS Code8541.29.00.75
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency920MHz
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test860mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS (Dual)
- Gain19.5dB
- DS Breakdown Voltage-Min105V
- Power - Output100W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test48V
- RoHS StatusROHS3 Compliant
MMRF1020-04GNR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMRF1020-04GNR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMRF1020-04GNR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMRF1020-04GNR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMRF1020-04GNR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMRF1020-04GNR3 More Descriptions
RF Power Transistor,720 to 960 MHz, 100 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825
Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V, FM4, RoHSNXP Semiconductors SCT
Transistor RF FET N-CH 105V 720MHz to 960MHz 4-Pin OM-780G T/R
FET RF 2CH 105V 920MHZ OM780-4G
Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V, FM4, RoHSNXP Semiconductors SCT
Transistor RF FET N-CH 105V 720MHz to 960MHz 4-Pin OM-780G T/R
FET RF 2CH 105V 920MHZ OM780-4G
The three parts on the right have similar specifications to MMRF1020-04GNR3.
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ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - RatedHTS CodeTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusSubcategoryTerminal PositionOperating Temperature (Max)View Compare
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MMRF1020-04GNR310 WeeksOM-780G-4LYESSILICONTape & Reel (TR)2005e3Active3 (168 Hours)4EAR99Matte Tin (Sn)105V8541.29.00.75GULL WING260920MHz40R-PDSO-G41SINGLEENHANCEMENT MODESOURCE860mAAMPLIFIERN-CHANNELLDMOS (Dual)19.5dB105V100WMETAL-OXIDE SEMICONDUCTOR48VROHS3 Compliant---- -
10 WeeksNI-780S--Tape & Reel (TR)2015-ActiveNot Applicable-EAR99-120V8541.29.00.75-2601.3GHz40-----100mA--LDMOS22.7dB-250W-50VROHS3 Compliant---
-
10 WeeksNI-1230-4LS2L--Tape & Reel (TR)2013-ActiveNot Applicable-EAR99-65V--NOT SPECIFIED2.5GHzNOT SPECIFIED-----700mA--LDMOS (Dual)14.1dB-50W-28VROHS3 Compliant---
-
10 WeeksNI-780SYESSILICONTape & Reel (TR)2013-ActiveNot Applicable2EAR99-100V8541.29.00.75FLAT2601.03GHz40R-CDFP-F21SINGLEENHANCEMENT MODESOURCE100mAAMPLIFIERN-CHANNELLDMOS20.3dB110V275WMETAL-OXIDE SEMICONDUCTOR50VROHS3 CompliantFET General Purpose PowerDUAL225°C
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