NXP USA Inc. MMRF1005HSR5

Name: MMRF1005HSR5
Brand: NXP USA Inc.
SKU: 3554086-MMRF1005HSR5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMRF1005HSR5

Manufacturer:: NXP USA Inc.

Ventron No:: 3554086-MMRF1005HSR5

Description:: FET RF 120V 1.3GHZ NI-780S

ECAD Model:

Datasheet:: MMRF1005HSR5

Specifications

NXP USA Inc. MMRF1005HSR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MMRF1005HSR5.

Factory Lead Time
10 Weeks
Package / Case
NI-780S
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
120V
HTS Code
8541.29.00.75
Peak Reflow Temperature (Cel)
260
Frequency
1.3GHz
Time@Peak Reflow Temperature-Max (s)
40
Current - Test
100mA
Transistor Type
LDMOS
Gain
22.7dB
Power - Output
250W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant

Description

MMRF1005HSR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMRF1005HSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMRF1005HSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

MMRF1005HSR5 More Descriptions

Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
RF Power Transistor,1200 to 1400 MHz, 250 W, Typ Gain in dB is 22.7 @ 1300 MHz, 50 V, LDMOS, SOT1793
Power LDMOS Transistor N-Channel 120V 2-Pin NI-780S T/R
Trans MOSFET N-CH 120V 2-Pin NI-780S T/R
IC CTRLR PWR FACTOR PWM 16SOIC

Product Comparison

The three parts on the right have similar specifications to MMRF1005HSR5.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated

HTS Code

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Current - Test

Transistor Type

Gain

Power - Output

Voltage - Test

RoHS Status

View Compare
MMRF1005HSR5

NXP USA Inc.

10 Weeks

NI-780S

Tape & Reel (TR)

2015

Active

Not Applicable

EAR99

120V

8541.29.00.75

260

1.3GHz

40

100mA

LDMOS

22.7dB

250W

50V

ROHS3 Compliant

-
MMRF1022HSR5

NXP USA Inc.

10 Weeks

NI-1230-4LS2L

Tape & Reel (TR)

2013

Active

Not Applicable

EAR99

65V

-

NOT SPECIFIED

2.14GHz

NOT SPECIFIED

500mA

LDMOS (Dual)

16.2dB

63W

28V

ROHS3 Compliant

MMRF1005HSR5 vs MMRF1022HSR5
MMRF1311HR5

NXP USA Inc.

-

SOT-979A

Tape & Reel (TR)

2013

Obsolete

3 (168 Hours)

-

50V

-

-

470MHz~860MHz

-

-

LDMOS

20dB

140W

-

ROHS3 Compliant

MMRF1005HSR5 vs MMRF1311HR5
MMRF1310HR5

NXP USA Inc.

10 Weeks

NI780-4

Tape & Reel (TR)

2013

Active

3 (168 Hours)

EAR99

133V

8541.29.00.75

260

230MHz

40

100mA

LDMOS (Dual)

26.5dB

300W

50V

ROHS3 Compliant

MMRF1005HSR5 vs MMRF1310HR5