NXP USA Inc. MMRF1017NR3

Name: MMRF1017NR3
Brand: NXP USA Inc.
SKU: 2477530-MMRF1017NR3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMRF1017NR3

Manufacturer:: NXP USA Inc.

Ventron No:: 2477530-MMRF1017NR3

Description:: FET RF 65V 960MHZ

ECAD Model:

Datasheet:: MMRF1017NR3

Specifications

NXP USA Inc. MMRF1017NR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MMRF1017NR3.

Factory Lead Time
10 Weeks
Package / Case
OM-780-2
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Voltage - Rated
65V
HTS Code
8541.29.00.40
Peak Reflow Temperature (Cel)
260
Frequency
960MHz
Time@Peak Reflow Temperature-Max (s)
40
Current - Test
1.4A
Transistor Type
LDMOS
Gain
20dB
Power - Output
80W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

MMRF1017NR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMRF1017NR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMRF1017NR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

MMRF1017NR3 More Descriptions

RF Power Transistor,720 to 960 MHz, 280 W, Typ Gain in dB is 20 @ 960 MHz, 28 V, LDMOS, SOT1823
RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 28 V, FM2F, RoHSNXP Semiconductors SCT
Transistor RF FET N-CH 65V 720MHz to 960MHz 2-Pin OM-780 T/R

Product Comparison

The three parts on the right have similar specifications to MMRF1017NR3.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Voltage - Rated

HTS Code

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Current - Test

Transistor Type

Gain

Power - Output

Voltage - Test

RoHS Status

Surface Mount

Transistor Element Material

Number of Terminations

Subcategory

Terminal Position

Terminal Form

JESD-30 Code

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

DS Breakdown Voltage-Min

FET Technology

View Compare
MMRF1017NR3

NXP USA Inc.

10 Weeks

OM-780-2

Tape & Reel (TR)

2013

e3

Active

3 (168 Hours)

EAR99

MATTE TIN

65V

8541.29.00.40

260

960MHz

40

1.4A

LDMOS

20dB

80W

28V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMRF1311HR5

NXP USA Inc.

-

SOT-979A

Tape & Reel (TR)

2013

-

Obsolete

3 (168 Hours)

-

-

50V

-

-

470MHz~860MHz

-

-

LDMOS

20dB

140W

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MMRF1017NR3 vs MMRF1311HR5
MMRF1024HSR5

NXP USA Inc.

10 Weeks

NI-1230-4LS2L

Tape & Reel (TR)

2013

-

Active

Not Applicable

EAR99

-

65V

-

NOT SPECIFIED

2.5GHz

NOT SPECIFIED

700mA

LDMOS (Dual)

14.1dB

50W

28V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MMRF1017NR3 vs MMRF1024HSR5
MMRF1008HSR5

NXP USA Inc.

10 Weeks

NI-780S

Tape & Reel (TR)

2013

-

Active

Not Applicable

EAR99

-

100V

8541.29.00.75

260

1.03GHz

40

100mA

LDMOS

20.3dB

275W

50V

ROHS3 Compliant

YES

SILICON

2

FET General Purpose Power

DUAL

FLAT

R-CDFP-F2

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

AMPLIFIER

N-CHANNEL

110V

METAL-OXIDE SEMICONDUCTOR

MMRF1017NR3 vs MMRF1008HSR5