MMDF2P02HDR2

ON Semiconductor MMDF2P02HDR2

Part Number:
MMDF2P02HDR2
Manufacturer:
ON Semiconductor
Ventron No:
2848359-MMDF2P02HDR2
Description:
MOSFET 2P-CH 20V 3.3A 8-SOIC
ECAD Model:
Datasheet:
MMDF2P02HDR2

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Specifications
ON Semiconductor MMDF2P02HDR2 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMDF2P02HDR2.
  • Lifecycle Status
    OBSOLETE (Last Updated: 1 day ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Max Power Dissipation
    2W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -2A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MMDF2P02HD
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    160m Ω @ 2A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    588pF @ 16V
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    66ns
  • Fall Time (Typ)
    37 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    3.3A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.16Ohm
  • Drain to Source Breakdown Voltage
    -20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Feedback Cap-Max (Crss)
    232 pF
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MMDF2P02HDR2 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDF2P02HDR2 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDF2P02HDR2. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMDF2P02HDR2 More Descriptions
Power MOSFET 20V 3.3A 160 mOhm Dual P-Channel SO-8
MOSFETs- Power and Small Signal 20V 2A P-Channel No-Cancel/No-Return
Small Signal Field-Effect Transistor, 3.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to MMDF2P02HDR2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Feedback Cap-Max (Crss)
    RoHS Status
    Lead Free
    Avalanche Energy Rating (Eas)
    Terminal Finish
    Terminal Position
    Current - Continuous Drain (Id) @ 25°C
    Polarity/Channel Type
    Threshold Voltage
    REACH SVHC
    View Compare
  • MMDF2P02HDR2
    MMDF2P02HDR2
    OBSOLETE (Last Updated: 1 day ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e0
    no
    Obsolete
    1 (Unlimited)
    8
    EAR99
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    -20V
    2W
    GULL WING
    240
    not_compliant
    -2A
    30
    MMDF2P02HD
    8
    Not Qualified
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    2W
    2 P-Channel (Dual)
    SWITCHING
    160m Ω @ 2A, 10V
    2V @ 250μA
    588pF @ 16V
    20nC @ 10V
    66ns
    37 ns
    25 ns
    3.3A
    20V
    0.16Ohm
    -20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    232 pF
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
  • MMDF2N02ER2
    OBSOLETE (Last Updated: 2 weeks ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    8
    EAR99
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    25V
    2W
    GULL WING
    240
    not_compliant
    2A
    30
    -
    8
    Not Qualified
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    2W
    2 N-Channel (Dual)
    SWITCHING
    100m Ω @ 2.2A, 10V
    3V @ 250μA
    532pF @ 16V
    30nC @ 10V
    17ns
    18 ns
    27 ns
    3.6A
    20V
    0.1Ohm
    25V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    Non-RoHS Compliant
    Contains Lead
    245 mJ
    -
    -
    -
    -
    -
    -
  • MMDF2C03HDR2G
    OBSOLETE (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    Other Transistors
    30V
    2W
    GULL WING
    260
    unknown
    2A
    40
    MMDF2C03HD
    8
    Not Qualified
    2
    -
    ENHANCEMENT MODE
    2W
    N and P-Channel
    SWITCHING
    70m Ω @ 3A, 10V
    3V @ 250μA
    630pF @ 24V
    16nC @ 10V
    18ns
    194 ns
    81 ns
    4.1A
    20V
    0.07Ohm
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    RoHS Compliant
    Lead Free
    -
    Tin (Sn)
    DUAL
    4.1A 3A
    N-CHANNEL AND P-CHANNEL
    1.7V
    No SVHC
  • MMDF2P02HDR2G
    OBSOLETE (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    -20V
    2W
    GULL WING
    260
    unknown
    -2A
    40
    MMDF2P02HD
    8
    Not Qualified
    2
    -
    ENHANCEMENT MODE
    2W
    2 P-Channel (Dual)
    SWITCHING
    160m Ω @ 2A, 10V
    2V @ 250μA
    588pF @ 16V
    20nC @ 10V
    66ns
    37 ns
    25 ns
    3.3A
    20V
    0.16Ohm
    -20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    RoHS Compliant
    Lead Free
    -
    Tin (Sn)
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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